Determination of band alignment in the single-layer MoS2/WSe2 heterojunction

Handle URI:
http://hdl.handle.net/10754/561082
Title:
Determination of band alignment in the single-layer MoS2/WSe2 heterojunction
Authors:
Chiu, Ming-Hui; Zhang, Chendong; Shiu, Hung-Wei; Chuu, Chih-Piao; Chen, Chang-Hsiao; Chang, Chih-Yuan S.; Chen, Chia-Hao; Chou, Mei-Yin; Shih, Chih-Kang; Li, Lain-Jong ( 0000-0002-4059-7783 )
Abstract:
The emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Determination of band alignment in the single-layer MoS2/WSe2 heterojunction 2015, 6:7666 Nature Communications
Journal:
Nature Communications
Issue Date:
16-Jul-2015
DOI:
10.1038/ncomms8666
Type:
Article
ISSN:
2041-1723
Additional Links:
http://www.nature.com/doifinder/10.1038/ncomms8666
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorChiu, Ming-Huien
dc.contributor.authorZhang, Chendongen
dc.contributor.authorShiu, Hung-Weien
dc.contributor.authorChuu, Chih-Piaoen
dc.contributor.authorChen, Chang-Hsiaoen
dc.contributor.authorChang, Chih-Yuan S.en
dc.contributor.authorChen, Chia-Haoen
dc.contributor.authorChou, Mei-Yinen
dc.contributor.authorShih, Chih-Kangen
dc.contributor.authorLi, Lain-Jongen
dc.date.accessioned2015-07-27T12:25:08Zen
dc.date.available2015-07-27T12:25:08Zen
dc.date.issued2015-07-16en
dc.identifier.citationDetermination of band alignment in the single-layer MoS2/WSe2 heterojunction 2015, 6:7666 Nature Communicationsen
dc.identifier.issn2041-1723en
dc.identifier.doi10.1038/ncomms8666en
dc.identifier.urihttp://hdl.handle.net/10754/561082en
dc.description.abstractThe emergence of two-dimensional electronic materials has stimulated proposals of novel electronic and photonic devices based on the heterostructures of transition metal dichalcogenides. Here we report the determination of band offsets in the heterostructures of transition metal dichalcogenides by using microbeam X-ray photoelectron spectroscopy and scanning tunnelling microscopy/spectroscopy. We determine a type-II alignment between MoS2 and WSe2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV. First-principles calculations show that in this heterostructure with dissimilar chalcogen atoms, the electronic structures of WSe2 and MoS2 are well retained in their respective layers due to a weak interlayer coupling. Moreover, a valence band offset of 0.94 eV is obtained from density functional theory, consistent with the experimental determination.en
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms8666en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titleDetermination of band alignment in the single-layer MoS2/WSe2 heterojunctionen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNature Communicationsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitute of Atomic and Molecular Sciences, Academia Sinica, No. 1, Roosevelt Road, Sec. 4, Taipei 10617, Taiwan.en
dc.contributor.institutionDepartment of Physics, University of Texas at Austin, Austin, Texas 78712, USA.en
dc.contributor.institutionNational Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan.en
dc.contributor.institutionSchool of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.en
dc.contributor.institutionDeapartment of Physics, National Taiwan University, Taipei 10617, Taiwan.en
kaust.authorLi, Lain-Jongen
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