Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation

Handle URI:
http://hdl.handle.net/10754/560371
Title:
Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation
Authors:
Yu, Xuechao; Shen, Youde; Liu, Tao; Wu, Tao ( 0000-0003-0845-4827 ) ; Jie Wang, Qi
Abstract:
Graphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.
KAUST Department:
Materials Science and Engineering Program
Citation:
Photocurrent generation in lateral graphene p-n junction created by electron-beam irradiation 2015, 5:12014 Scientific Reports
Journal:
Scientific Reports
Issue Date:
8-Jul-2015
DOI:
10.1038/srep12014
Type:
Article
ISSN:
2045-2322
Additional Links:
http://www.nature.com/doifinder/10.1038/srep12014
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorYu, Xuechaoen
dc.contributor.authorShen, Youdeen
dc.contributor.authorLiu, Taoen
dc.contributor.authorWu, Taoen
dc.contributor.authorJie Wang, Qien
dc.date.accessioned2015-07-14T12:02:52Zen
dc.date.available2015-07-14T12:02:52Zen
dc.date.issued2015-07-08en
dc.identifier.citationPhotocurrent generation in lateral graphene p-n junction created by electron-beam irradiation 2015, 5:12014 Scientific Reportsen
dc.identifier.issn2045-2322en
dc.identifier.doi10.1038/srep12014en
dc.identifier.urihttp://hdl.handle.net/10754/560371en
dc.description.abstractGraphene has been considered as an attractive material for optoelectronic applications such as photodetectors owing to its extraordinary properties, e.g. broadband absorption and ultrahigh mobility. However, challenges still remain in fundamental and practical aspects of the conventional graphene photodetectors which normally rely on the photoconductive mode of operation which has the drawback of e.g. high dark current. Here, we demonstrated the photovoltaic mode operation in graphene p-n junctions fabricated by a simple but effective electron irradiation method that induces n-type doping in intrinsic p-type graphene. The physical mechanism of the junction formation is owing to the substrate gating effect caused by electron irradiation. Photoresponse was obtained for this type of photodetector because the photoexcited electron-hole pairs can be separated in the graphene p-n junction by the built-in potential. The fabricated graphene p-n junction photodetectors exhibit a high detectivity up to ~3 × 1010 Jones (cm Hz1/2 W−1) at room temperature, which is on a par with that of the traditional III–V photodetectors. The demonstrated novel and simple scheme for obtaining graphene p-n junctions can be used for other optoelectronic devices such as solar cells and be applied to other two dimensional materials based devices.en
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/srep12014en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titlePhotocurrent generation in lateral graphene p-n junction created by electron-beam irradiationen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalScientific Reportsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionOPTIMUS, Photonics Centre of Excellence, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Ave., 639798, Singaporeen
dc.contributor.institutionCentre for Disruptive Photonic Technologies, Nanyang Technological University, 21 Nanyang Link, 637371, Singaporeen
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