Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics

Handle URI:
http://hdl.handle.net/10754/558702
Title:
Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics
Authors:
Qi, Junjie; Lan, Yann-Wen; Stieg, Adam Z. ( 0000-0001-7312-9364 ) ; Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong ( 0000-0002-4059-7783 ) ; Chen, Chii-Dong; Zhang, Yue; Wang, Kang L.
Abstract:
High-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS2 strain/force sensor built using a monolayer MoS2 triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical–electronic nanodevices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Piezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics 2015, 6:7430 Nature Communications
Journal:
Nature Communications
Issue Date:
25-Jun-2015
DOI:
10.1038/ncomms8430
Type:
Article
ISSN:
2041-1723
Additional Links:
http://www.nature.com/doifinder/10.1038/ncomms8430
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorQi, Junjieen
dc.contributor.authorLan, Yann-Wenen
dc.contributor.authorStieg, Adam Z.en
dc.contributor.authorChen, Jyun-Hongen
dc.contributor.authorZhong, Yuan-Liangen
dc.contributor.authorLi, Lain-Jongen
dc.contributor.authorChen, Chii-Dongen
dc.contributor.authorZhang, Yueen
dc.contributor.authorWang, Kang L.en
dc.date.accessioned2015-06-30T14:31:55Zen
dc.date.available2015-06-30T14:31:55Zen
dc.date.issued2015-06-25en
dc.identifier.citationPiezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronics 2015, 6:7430 Nature Communicationsen
dc.identifier.issn2041-1723en
dc.identifier.doi10.1038/ncomms8430en
dc.identifier.urihttp://hdl.handle.net/10754/558702en
dc.description.abstractHigh-performance piezoelectricity in monolayer semiconducting transition metal dichalcogenides is highly desirable for the development of nanosensors, piezotronics and photo-piezotransistors. Here we report the experimental study of the theoretically predicted piezoelectric effect in triangle monolayer MoS2 devices under isotropic mechanical deformation. The experimental observation indicates that the conductivity of MoS2 devices can be actively modulated by the piezoelectric charge polarization-induced built-in electric field under strain variation. These polarization charges alter the Schottky barrier height on both contacts, resulting in a barrier height increase with increasing compressive strain and decrease with increasing tensile strain. The underlying mechanism of strain-induced in-plane charge polarization is proposed and discussed using energy band diagrams. In addition, a new type of MoS2 strain/force sensor built using a monolayer MoS2 triangle is also demonstrated. Our results provide evidence for strain-gating monolayer MoS2 piezotronics, a promising avenue for achieving augmented functionalities in next-generation electronic and mechanical–electronic nanodevices.en
dc.relation.urlhttp://www.nature.com/doifinder/10.1038/ncomms8430en
dc.rightsThis work is licensed under a Creative Commons Attribution 4.0 International License. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in the credit line; if the material is not included under the Creative Commons license, users will need to obtain permission from the license holder to reproduce the material. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/en
dc.titlePiezoelectric effect in chemical vapour deposition-grown atomic-monolayer triangular molybdenum disulfide piezotronicsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNature Communicationsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSchool of Materials Science and Engineering, University of Science and Technology Beijing, Xueyuan Road 30, Beijing 100083, Chinaen
dc.contributor.institutionDepartment of Electrical Engineering, University of California, Los Angeles, California 90095, USAen
dc.contributor.institutionInstitute of Physics, Academia Sinica, Taipei 115, Taiwanen
dc.contributor.institutionCalifornia NanoSystems Institute (CNSI), University of California-Los Angeles, Los Angeles, California 90095, USAen
dc.contributor.institutionWPI Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science, Tsukuba 305-0044, Japanen
dc.contributor.institutionDepartment of Physics and Center for Nanotechnology, Chung Yuan Cristian University, Chungli 32023, Taiwanen
kaust.authorLi, Lain-Jongen
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