Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing

Handle URI:
http://hdl.handle.net/10754/558584
Title:
Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing
Authors:
Shen, Chao; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm2). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.
KAUST Department:
Photonics Laboratory
Citation:
Enabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing 2015, 23 (6):7991 Optics Express
Publisher:
The Optical Society
Journal:
Optics Express
Issue Date:
19-Mar-2015
DOI:
10.1364/OE.23.007991
Type:
Article
ISSN:
1094-4087
Additional Links:
https://www.osapublishing.org/oe/abstract.cfm?uri=oe-23-6-7991
Appears in Collections:
Articles; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorShen, Chaoen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-06-28T13:37:29Zen
dc.date.available2015-06-28T13:37:29Zen
dc.date.issued2015-03-19en
dc.identifier.citationEnabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixing 2015, 23 (6):7991 Optics Expressen
dc.identifier.issn1094-4087en
dc.identifier.doi10.1364/OE.23.007991en
dc.identifier.urihttp://hdl.handle.net/10754/558584en
dc.description.abstractWe report on a unique area-selective, post-growth approach in engineering the quantum-confined potential-energy profile of InGaN/GaN quantum wells (QWs) utilizing metal/dielectric-coating induced intermixing process. This led to simultaneous realization of adjacent regions with peak emission of 2.74 eV and 2.82 eV with a high spatial resolution (~1 μm) at the coating boundary. The potential profile softening in the intermixed QW light-emitting diode (LED) was experimentally and numerically correlated, shedding light on the origin of alleviated efficiency droop from 30.5% to 16.6% (at 150 A/cm2). The technique is advantageous for fabricating high efficiency light-emitters, and is amenable to monolithic integration of nitride-based photonic devices.en
dc.publisherThe Optical Societyen
dc.relation.urlhttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-23-6-7991en
dc.rightsThis paper was published in Optics Express and is made available as an electronic reprint with the permission of OSA. The paper can be found at the following URL on the OSA website: https://www.osapublishing.org/oe/abstract.cfm?uri=oe-23-6-7991. Systematic or multiple reproduction or distribution to multiple locations via electronic or other means is prohibited and is subject to penalties under law.en
dc.titleEnabling area-selective potential-energy engineering in InGaN/GaN quantum wells by post-growth intermixingen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.identifier.journalOptics Expressen
dc.eprint.versionPost-printen
kaust.authorShen, Chaoen
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
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