First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm

Handle URI:
http://hdl.handle.net/10754/558571
Title:
First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm
Authors:
Mohammed, Abdul Majid ( 0000-0003-2224-8982 ) ; Al-Jabr, Ahmad Ali; Oubei, Hassan M.; Alias, Mohd Sharizal ( 0000-0003-1369-1421 ) ; Anjum, Dalaver H.; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.
KAUST Department:
Photonics Laboratory; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
First demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm 2015 Electronics Letters
Journal:
Electronics Letters
Issue Date:
26-Jun-2015
DOI:
10.1049/el.2015.1658
Type:
Article
ISSN:
0013-5194; 1350-911X
Additional Links:
http://digital-library.theiet.org/content/journals/10.1049/el.2015.1658; http://digital-library.theiet.org/content/journals/10.1049/el.2015.2124
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorMohammed, Abdul Majiden
dc.contributor.authorAl-Jabr, Ahmad Alien
dc.contributor.authorOubei, Hassan M.en
dc.contributor.authorAlias, Mohd Sharizalen
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-06-29T06:03:34Zen
dc.date.available2015-06-29T06:03:34Zen
dc.date.issued2015-06-26en
dc.identifier.citationFirst demonstration of InGaP/InAlGaP based orange laser emitting at 608 nm 2015 Electronics Lettersen
dc.identifier.issn0013-5194en
dc.identifier.issn1350-911Xen
dc.identifier.doi10.1049/el.2015.1658en
dc.identifier.urihttp://hdl.handle.net/10754/558571en
dc.description.abstractThe fabrication of orange-emitting semiconductor laser on interdiffused InGaP/InAlGaP structure is reported. The lasers lased at 22°C at a wavelength as short as 608 nm with threshold current density of 3.4 KAcm −2 and a maximum output power of ∼46 mW. This is the shortest wavelength electrically pumped semiconductor laser emission from the InGaP/InAlGaP structure.en
dc.relation.urlhttp://digital-library.theiet.org/content/journals/10.1049/el.2015.1658en
dc.relation.urlhttp://digital-library.theiet.org/content/journals/10.1049/el.2015.2124en
dc.rightsThis is an open access article published by the IET under the Creative Commons Attribution-NonCommercial License (http://creativecommons.org/licenses/by-nc/3.0/)en
dc.titleFirst demonstration of InGaP/InAlGaP based orange laser emitting at 608 nmen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalElectronics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorAl-Jabr, Ahmaden
kaust.authorAlias, Mohd Sharizalen
kaust.authorMajid, M. A.en
kaust.authorOubei, Hassan M.en
kaust.authorNg, Tien Kheeen
kaust.authorOoi, Boon S.en
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.