Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material

Handle URI:
http://hdl.handle.net/10754/558566
Title:
Device Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material
Authors:
Wang, Lingfei; Li, Yongfeng; Bera, Ashok ( 0000-0002-5643-5973 ) ; Ma, Chun; Jin, Feng; Yuan, Kaidi; Yin, Wanjian; David, Adrian; Chen, Wei; Wu, Wenbin; Prellier, Wilfrid; Wei, Suhuai; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
Searching for solar-absorbing materials containing earth-abundant elements with chemical stability is of critical importance for advancing photovoltaic technologies. Mott insulators have been theoretically proposed as potential photovoltaic materials. In this paper, we evaluate their performance in solar cells by exploring the photovoltaic properties of Mott insulator LaVO3 (LVO). LVO films show an indirect band gap of 1.08 eV as well as strong light absorption over a wide wavelength range in the solar spectrum. First-principles calculations on the band structure of LVO further reveal that the d−d transitions within the upper and lower Mott-Hubbard bands and p−d transitions between the O 2p and V 3d band contribute to the absorption in visible and ultraviolet ranges, respectively. Transport measurements indicate strong carrier trapping and the formation of polarons in LVO. To utilize the strong light absorption of LVO and to overcome its poor carrier transport, we incorporate it as a light absorber in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing light-absorbing materials and photovoltaic devices based on strongly correlated electrons.
KAUST Department:
Materials Science and Engineering Program
Citation:
Device Performance of the Mott Insulator LaVO3 as a Photovoltaic Material 2015, 3 (6) Physical Review Applied
Journal:
Physical Review Applied
Issue Date:
22-Jun-2015
DOI:
10.1103/PhysRevApplied.3.064015
Type:
Article
ISSN:
2331-7019
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevApplied.3.064015
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorWang, Lingfeien
dc.contributor.authorLi, Yongfengen
dc.contributor.authorBera, Ashoken
dc.contributor.authorMa, Chunen
dc.contributor.authorJin, Fengen
dc.contributor.authorYuan, Kaidien
dc.contributor.authorYin, Wanjianen
dc.contributor.authorDavid, Adrianen
dc.contributor.authorChen, Weien
dc.contributor.authorWu, Wenbinen
dc.contributor.authorPrellier, Wilfriden
dc.contributor.authorWei, Suhuaien
dc.contributor.authorWu, Taoen
dc.date.accessioned2015-06-28T13:38:24Zen
dc.date.available2015-06-28T13:38:24Zen
dc.date.issued2015-06-22en
dc.identifier.citationDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Material 2015, 3 (6) Physical Review Applieden
dc.identifier.issn2331-7019en
dc.identifier.doi10.1103/PhysRevApplied.3.064015en
dc.identifier.urihttp://hdl.handle.net/10754/558566en
dc.description.abstractSearching for solar-absorbing materials containing earth-abundant elements with chemical stability is of critical importance for advancing photovoltaic technologies. Mott insulators have been theoretically proposed as potential photovoltaic materials. In this paper, we evaluate their performance in solar cells by exploring the photovoltaic properties of Mott insulator LaVO3 (LVO). LVO films show an indirect band gap of 1.08 eV as well as strong light absorption over a wide wavelength range in the solar spectrum. First-principles calculations on the band structure of LVO further reveal that the d−d transitions within the upper and lower Mott-Hubbard bands and p−d transitions between the O 2p and V 3d band contribute to the absorption in visible and ultraviolet ranges, respectively. Transport measurements indicate strong carrier trapping and the formation of polarons in LVO. To utilize the strong light absorption of LVO and to overcome its poor carrier transport, we incorporate it as a light absorber in solar cells in conjunction with carrier transporters and evaluate its device performance. Our complementary experimental and theoretical results on such prototypical solar cells made of Mott-Hubbard transition-metal oxides pave the road for developing light-absorbing materials and photovoltaic devices based on strongly correlated electrons.en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevApplied.3.064015en
dc.rightsArchived with thanks to Physical Review Applieden
dc.titleDevice Performance of the Mott InsulatorDevice Performance of the Mott Insulator LaVO3 as a Photovoltaic Materialen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalPhysical Review Applieden
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionKey Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People’s Republic of Chinaen
dc.contributor.institutionHefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China, and High Magnetic Field Laboratory, Chinese Academy of Sciences, Hefei 230026, People’s Republic of Chinaen
dc.contributor.institutionDepartment of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117543en
dc.contributor.institutionNational Renewable Energy Laboratory, Golden, Colorado 80401, USAen
dc.contributor.institutionLaboratoire CRISMAT, CNRS UMR 6508, ENSICAEN, 14050 Caen, Franceen
kaust.authorWang, Lingfeien
kaust.authorBera, Ashoken
kaust.authorMa, Chunen
kaust.authorWu, Taoen
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