Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers

Handle URI:
http://hdl.handle.net/10754/556675
Title:
Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers
Authors:
Li, Zirun; Mi, Wenbo; Wang, Xiaocha; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Anisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Interfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers 2015:150209061453002 ACS Applied Materials & Interfaces
Journal:
ACS Applied Materials & Interfaces
Issue Date:
2-Feb-2015
DOI:
10.1021/am509173r
Type:
Article
ISSN:
1944-8244; 1944-8252
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/am509173r
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Zirunen
dc.contributor.authorMi, Wenboen
dc.contributor.authorWang, Xiaochaen
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-06-10T11:45:39Zen
dc.date.available2015-06-10T11:45:39Zen
dc.date.issued2015-02-02en
dc.identifier.citationInterfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayers 2015:150209061453002 ACS Applied Materials & Interfacesen
dc.identifier.issn1944-8244en
dc.identifier.issn1944-8252en
dc.identifier.doi10.1021/am509173ren
dc.identifier.urihttp://hdl.handle.net/10754/556675en
dc.description.abstractAnisotropic magnetoresistance (AMR) of the facing-target reactively sputtered epitaxial γ′-Fe4N/CoN bilayers is investigated. The phase shift and rectangular-like AMR appears at low temperatures, which can be ascribed to the interfacial exchange coupling. The phase shift comes from the exchange bias (EB) that makes the magnetization lag behind a small field. When the γ′-Fe4N thickness increases, the rectangular-like AMR appears. The rectangular-like AMR should be from the combined contributions including the EB-induced unidirectional anisotropy, intrinsic AMR of γ′-Fe4N layer and interfacial spin scattering.en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/am509173ren
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/am509173r.en
dc.subjectfacing-target sputteringen
dc.subjectFe4Nen
dc.subjectexchange biasen
dc.subjectbilayeren
dc.subjectanisotropic magnetoresistanceen
dc.titleInterfacial Exchange Coupling Induced Anomalous Anisotropic Magnetoresistance in Epitaxial γ′-Fe 4 N/CoN Bilayersen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalACS Applied Materials & Interfacesen
dc.eprint.versionPost-printen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, Chinaen
dc.contributor.institutionTianjin Key Laboratory of Film Electronic & Communicate Devices, School of Electronics Information Engineering, Tianjin University of Technology, Tianjin 300384, Chinaen
kaust.authorZhang, Xixiangen
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