Atomic Structure Control of Silica Thin Films on Pt(111)

Handle URI:
http://hdl.handle.net/10754/556100
Title:
Atomic Structure Control of Silica Thin Films on Pt(111)
Authors:
Crampton, Andrew S; Ridge, Claron J.; Rötzer, Marian David; Zwaschka, Gregor; Braun, Thomas; D'Elia, Valerio; Basset, Jean-Marie ( 0000-0003-3166-8882 ) ; Schweinberger, Florian Frank; Günther, Sebastian; Heiz, Ueli
Abstract:
Metal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.
KAUST Department:
KAUST Catalysis Center (KCC)
Citation:
Atomic Structure Control of Silica Thin Films on Pt(111) 2015:150527163730008 The Journal of Physical Chemistry C
Journal:
The Journal of Physical Chemistry C
Issue Date:
27-May-2015
DOI:
10.1021/acs.jpcc.5b02667
Type:
Article
ISSN:
1932-7447; 1932-7455
Additional Links:
http://pubs.acs.org/doi/abs/10.1021/acs.jpcc.5b02667
Appears in Collections:
Articles; KAUST Catalysis Center (KCC); KAUST Catalysis Center (KCC)

Full metadata record

DC FieldValue Language
dc.contributor.authorCrampton, Andrew Sen
dc.contributor.authorRidge, Claron J.en
dc.contributor.authorRötzer, Marian Daviden
dc.contributor.authorZwaschka, Gregoren
dc.contributor.authorBraun, Thomasen
dc.contributor.authorD'Elia, Valerioen
dc.contributor.authorBasset, Jean-Marieen
dc.contributor.authorSchweinberger, Florian Franken
dc.contributor.authorGünther, Sebastianen
dc.contributor.authorHeiz, Uelien
dc.date.accessioned2015-05-31T14:18:37Zen
dc.date.available2015-05-31T14:18:37Zen
dc.date.issued2015-05-27en
dc.identifier.citationAtomic Structure Control of Silica Thin Films on Pt(111) 2015:150527163730008 The Journal of Physical Chemistry Cen
dc.identifier.issn1932-7447en
dc.identifier.issn1932-7455en
dc.identifier.doi10.1021/acs.jpcc.5b02667en
dc.identifier.urihttp://hdl.handle.net/10754/556100en
dc.description.abstractMetal oxide thin films grown on metal single crystals are commonly used to model heterogeneous catalyst supports. The structure and properties of thin silicon dioxide films grown on metal single crystals have only recently been thoroughly characterized and their spectral properties well established. We report the successful growth of a three- dimensional, vitreous silicon dioxide thin film on the Pt(111) surface and reproduce the closed bilayer structure previously reported. The confirmation of the three dimensional nature of the film is unequivocally shown by the infrared absorption band at 1252 cm−1. Temperature programmed desorption was used to show that this three-dimensional thin film covers the Pt(111) surface to such an extent that its application as a catalyst support for clusters/nanoparticles is possible. The growth of a three-dimensional film was seen to be directly correlated with the amount of oxygen present on the surface after the silicon evaporation process. This excess of oxygen is tentatively attributed to atomic oxygen being generated in the evaporator. The identification of atomic oxygen as a necessary building block for the formation of a three-dimensional thin film opens up new possibilities for thin film growth on metal supports, whereby simply changing the type of oxygen enables thin films with different atomic structures to be synthesized. This is a novel approach to tune the synthesis parameters of thin films to grow a specific structure and expands the options for modeling common amorphous silica supports under ultra high vacuum conditions.en
dc.relation.urlhttp://pubs.acs.org/doi/abs/10.1021/acs.jpcc.5b02667en
dc.rightsThis document is the Accepted Manuscript version of a Published Work that appeared in final form in The Journal of Physical Chemistry C, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/acs.jpcc.5b02667.en
dc.subjectCVDen
dc.subjectSiO2en
dc.subjectIRRASen
dc.subjectTPDen
dc.subjectMIESen
dc.subjectUPS (He Iα)en
dc.titleAtomic Structure Control of Silica Thin Films on Pt(111)en
dc.typeArticleen
dc.contributor.departmentKAUST Catalysis Center (KCC)en
dc.identifier.journalThe Journal of Physical Chemistry Cen
dc.eprint.versionPost-printen
dc.contributor.institutionTechnische Universität München, Lehrstuhl für Physikalische Chemie, Zentralinstitut für Katalyse- forschung und Fakultät für Chemie, Lichtenbergstr. 4, 85748 Garching, Germanyen
dc.contributor.institutionTechnische Universität München, Fachgebiet Physikalische Chemie mit Schwerpunkt Katalyse, Zentralin- stitut für Katalyseforschung und Fakultät für Chemie, Lichtenbergstr. 4, 85748 Garching, Germanyen
kaust.authorD'Elia, Valerioen
kaust.authorBasset, Jean-Marieen
kaust.authorCrampton, A. S.en
kaust.authorRidge, C. J.en
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