Multiferroic oxide thin films and heterostructures

Handle URI:
http://hdl.handle.net/10754/556099
Title:
Multiferroic oxide thin films and heterostructures
Authors:
Lu, Chengliang; Hu, Weijin ( 0000-0001-5862-1481 ) ; Tian, Yufeng; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
Multiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Multiferroic oxide thin films and heterostructures 2015, 2 (2):021304 Applied Physics Reviews
Journal:
Applied Physics Reviews
Issue Date:
26-May-2015
DOI:
10.1063/1.4921545
Type:
Article
ISSN:
1931-9401
Additional Links:
http://scitation.aip.org/content/aip/journal/apr2/2/2/10.1063/1.4921545
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLu, Chengliangen
dc.contributor.authorHu, Weijinen
dc.contributor.authorTian, Yufengen
dc.contributor.authorWu, Taoen
dc.date.accessioned2015-05-31T08:54:54Zen
dc.date.available2015-05-31T08:54:54Zen
dc.date.issued2015-05-26en
dc.identifier.citationMultiferroic oxide thin films and heterostructures 2015, 2 (2):021304 Applied Physics Reviewsen
dc.identifier.issn1931-9401en
dc.identifier.doi10.1063/1.4921545en
dc.identifier.urihttp://hdl.handle.net/10754/556099en
dc.description.abstractMultiferroic materials promise a tantalizing perspective of novel applications in next-generation electronic, memory, and energy harvesting technologies, and at the same time they also represent a grand scientific challenge on understanding complex solid state systems with strong correlations between multiple degrees of freedom. In this review, we highlight the opportunities and obstacles in growing multiferroic thin films with chemical and structural integrity and integrating them in functional devices. Besides the magnetoelectric effect, multiferroics exhibit excellent resistant switching and photovoltaic properties, and there are plenty opportunities for them to integrate with other ferromagnetic and superconducting materials. The challenges include, but not limited, defect-related leakage in thin films, weak magnetism, and poor control on interface coupling. Although our focuses are Bi-based perovskites and rare earth manganites, the insights are also applicable to other multiferroic materials. We will also review some examples of multiferroic applications in spintronics, memory, and photovoltaic devices.en
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apr2/2/2/10.1063/1.4921545en
dc.rightsArchived with thanks to Applied Physics Reviewsen
dc.titleMultiferroic oxide thin films and heterostructuresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Reviewsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSchool of Physics and Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology, Wuhan 430074, Chinaen
dc.contributor.institutionSchool of Physics, Shandong University, Jinan 250100, Chinaen
kaust.authorHu, Weijinen
kaust.authorWu, Taoen
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