(-201) β-Gallium oxide substrate for high quality GaN materials

Handle URI:
http://hdl.handle.net/10754/555878
Title:
(-201) β-Gallium oxide substrate for high quality GaN materials
Authors:
Roqan, Iman S. ( 0000-0001-7442-4330 ) ; Mumthaz Muhammed, Mufasila
Abstract:
(-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga2O3 are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~108 cm-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Roqan, I. S., and M. M. Muhammed. "(-201) β-Gallium oxide substrate for high optical and structural quality GaN materials." In SPIE OPTO, pp. 93641K-93641K. International Society for Optics and Photonics, 2015.
Publisher:
SPIE-Intl Soc Optical Eng
Journal:
Oxide-based Materials and Devices VI
Conference/Event name:
Oxide-Based Materials and Devices VI
Issue Date:
13-Mar-2015
DOI:
10.1117/12.2076475
Type:
Conference Paper
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2076475
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorMumthaz Muhammed, Mufasilaen
dc.date.accessioned2015-05-27T13:47:53Zen
dc.date.available2015-05-27T13:47:53Zen
dc.date.issued2015-03-13en
dc.identifier.citationRoqan, I. S., and M. M. Muhammed. "(-201) β-Gallium oxide substrate for high optical and structural quality GaN materials." In SPIE OPTO, pp. 93641K-93641K. International Society for Optics and Photonics, 2015.en
dc.identifier.doi10.1117/12.2076475en
dc.identifier.urihttp://hdl.handle.net/10754/555878en
dc.description.abstract(-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga2O3 are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~108 cm-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.en
dc.publisherSPIE-Intl Soc Optical Engen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2076475en
dc.rightsArchived with thanks to Proceedings of SPIEen
dc.title(-201) β-Gallium oxide substrate for high quality GaN materialsen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalOxide-based Materials and Devices VIen
dc.conference.date2015-02-08 to 2015-02-11en
dc.conference.nameOxide-Based Materials and Devices VIen
dc.conference.locationSan Francisco, CA, USAen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorRoqan, Iman S.en
kaust.authorMumthaz Muhammed, Mufasilaen
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