Studies on Slurry Design Fundamentals for Advanced CMP Applications

Handle URI:
http://hdl.handle.net/10754/555794
Title:
Studies on Slurry Design Fundamentals for Advanced CMP Applications
Authors:
Basim, G. B.; Karagoz, A.; Ozdemir, Z.; Vakarelski, Ivan Uriev ( 0000-0001-9244-9160 ) ; Chen, Long
Abstract:
New developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials is germanium which enables improved performance through better channel mobility in shallow trench isolation (STI) applications. This paper reports on the slurry design alternatives for Ge CMP with surfactant mediation to improve on the silica/germanium selectivity using colloidal silica slurry. In addition to the standard CMP tests to evaluate the material removal rates, atomic force microscopy (AFM) based wear tests were also conducted to evaluate single particle-surface interaction of the polishing system. Furthermore, nature of the surface oxide film of germanium was studied through contact angle measurements and surface roughness tested by AFM. It was observed that the CMP selectivity of the silica/germanium system and defectivity control were possible with a reasonable material removal rate value by using self-assembled structures of cationic surfactants.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Surface Science
Citation:
Studies on Slurry Design Fundamentals for Advanced CMP Applications 2013, 50 (39):29 ECS Transactions
Journal:
ECS Transactions
Issue Date:
14-Jun-2013
DOI:
10.1149/05039.0029ecst
Type:
Article
ISSN:
1938-6737; 1938-5862
Additional Links:
http://ecst.ecsdl.org/cgi/doi/10.1149/05039.0029ecst
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorBasim, G. B.en
dc.contributor.authorKaragoz, A.en
dc.contributor.authorOzdemir, Z.en
dc.contributor.authorVakarelski, Ivan Urieven
dc.contributor.authorChen, Longen
dc.date.accessioned2015-05-26T08:01:37Zen
dc.date.available2015-05-26T08:01:37Zen
dc.date.issued2013-06-14en
dc.identifier.citationStudies on Slurry Design Fundamentals for Advanced CMP Applications 2013, 50 (39):29 ECS Transactionsen
dc.identifier.issn1938-6737en
dc.identifier.issn1938-5862en
dc.identifier.doi10.1149/05039.0029ecsten
dc.identifier.urihttp://hdl.handle.net/10754/555794en
dc.description.abstractNew developments and device performance requirements in microelectronics industry add to the challenges in chemical mechanical planarization (CMP) process. One of the recently introduced materials is germanium which enables improved performance through better channel mobility in shallow trench isolation (STI) applications. This paper reports on the slurry design alternatives for Ge CMP with surfactant mediation to improve on the silica/germanium selectivity using colloidal silica slurry. In addition to the standard CMP tests to evaluate the material removal rates, atomic force microscopy (AFM) based wear tests were also conducted to evaluate single particle-surface interaction of the polishing system. Furthermore, nature of the surface oxide film of germanium was studied through contact angle measurements and surface roughness tested by AFM. It was observed that the CMP selectivity of the silica/germanium system and defectivity control were possible with a reasonable material removal rate value by using self-assembled structures of cationic surfactants.en
dc.relation.urlhttp://ecst.ecsdl.org/cgi/doi/10.1149/05039.0029ecsten
dc.rightsArchived with thanks to ECS Transactions © 2013 ECS - The Electrochemical Societyen
dc.titleStudies on Slurry Design Fundamentals for Advanced CMP Applicationsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSurface Scienceen
dc.identifier.journalECS Transactionsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionOzyegin Universityen
kaust.authorVakarelski, Ivan Urieven
kaust.authorChen, Longen
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