Depth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications

Handle URI:
http://hdl.handle.net/10754/555787
Title:
Depth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications
Authors:
Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Mure, S.; Majhi, P.; Quevedo-Lopez, M. A.
Abstract:
Nanoscale La2O3 /HfO2 dielectric stacks have been studied using high resolution Rutherford backscattering spectrometry. The measured distance of the tail-end of the La signal from the dielectric/Si interface suggests that the origin of the threshold voltage shifts and the carrier mobility degradation may not be the same. Up to 20% drop in mobility and 500 mV shift in threshold voltage was observed as the La signal reached the Si substrate. Possible reasons for these changes are proposed, aided by depth profiling and bonding analysis. © 2011 The Electrochemical Society.
KAUST Department:
Materials Science and Engineering Program
Citation:
Depth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications 2011, 14 (3):H139 Electrochemical and Solid-State Letters
Publisher:
The Electrochemical Society
Journal:
Electrochemical and Solid-State Letters
Issue Date:
3-Jan-2011
DOI:
10.1149/1.3526141
Type:
Article
ISSN:
10990062
Additional Links:
http://esl.ecsdl.org/cgi/doi/10.1149/1.3526141
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorMure, S.en
dc.contributor.authorMajhi, P.en
dc.contributor.authorQuevedo-Lopez, M. A.en
dc.date.accessioned2015-05-26T07:47:29Zen
dc.date.available2015-05-26T07:47:29Zen
dc.date.issued2011-01-03en
dc.identifier.citationDepth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applications 2011, 14 (3):H139 Electrochemical and Solid-State Lettersen
dc.identifier.issn10990062en
dc.identifier.doi10.1149/1.3526141en
dc.identifier.urihttp://hdl.handle.net/10754/555787en
dc.description.abstractNanoscale La2O3 /HfO2 dielectric stacks have been studied using high resolution Rutherford backscattering spectrometry. The measured distance of the tail-end of the La signal from the dielectric/Si interface suggests that the origin of the threshold voltage shifts and the carrier mobility degradation may not be the same. Up to 20% drop in mobility and 500 mV shift in threshold voltage was observed as the La signal reached the Si substrate. Possible reasons for these changes are proposed, aided by depth profiling and bonding analysis. © 2011 The Electrochemical Society.en
dc.publisherThe Electrochemical Societyen
dc.relation.urlhttp://esl.ecsdl.org/cgi/doi/10.1149/1.3526141en
dc.rightsArchived with thanks to Electrochemical and Solid-State Letters © 2011 ECS - The Electrochemical Societyen
dc.subjectbonds (chemical)en
dc.subjectcarrier mobilityen
dc.subjectdielectric materialsen
dc.subjectelemental semiconductorsen
dc.subjecthafnium compoundsen
dc.subjectlanthanum compoundsen
dc.subjectnanoelectronicsen
dc.subjectnanostructured materialsen
dc.subjectRutherford backscatteringen
dc.subjectsemiconductor-insulator boundariesen
dc.subjectsiliconen
dc.titleDepth Profiling of La2O3 ∕ HfO2 Stacked Dielectrics for Nanoelectronic Device Applicationsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalElectrochemical and Solid-State Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionKobe Steel Ltd., Machinery and Engineering Company, Takasago 676-8670, Japanen
dc.contributor.institutionINTEL Assignee to SEMATECH, Austin, Texas 78748, USAen
dc.contributor.institutionMaterials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USAen
kaust.authorAlshareef, Husam N.en
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