Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics

Handle URI:
http://hdl.handle.net/10754/555786
Title:
Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics
Authors:
Salas-Villasenor, A. L.; Mejia, I.; Hovarth, J.; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Cha, D. K.; Ramirez-Bon, R.; Gnade, B. E.; Quevedo-Lopez, M. A.
Abstract:
Cadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.
KAUST Department:
Materials Science and Engineering Program
Citation:
Impact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics 2010, 13 (9):H313 Electrochemical and Solid-State Letters
Journal:
Electrochemical and Solid-State Letters
Issue Date:
29-Jun-2010
DOI:
10.1149/1.3456551
Type:
Article
ISSN:
10990062
Additional Links:
http://esl.ecsdl.org/cgi/doi/10.1149/1.3456551
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorSalas-Villasenor, A. L.en
dc.contributor.authorMejia, I.en
dc.contributor.authorHovarth, J.en
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorCha, D. K.en
dc.contributor.authorRamirez-Bon, R.en
dc.contributor.authorGnade, B. E.en
dc.contributor.authorQuevedo-Lopez, M. A.en
dc.date.accessioned2015-05-26T07:32:19Zen
dc.date.available2015-05-26T07:32:19Zen
dc.date.issued2010-06-29en
dc.identifier.citationImpact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronics 2010, 13 (9):H313 Electrochemical and Solid-State Lettersen
dc.identifier.issn10990062en
dc.identifier.doi10.1149/1.3456551en
dc.identifier.urihttp://hdl.handle.net/10754/555786en
dc.description.abstractCadmium sulfide thin film transistors were demonstrated as the n-type device for use in flexible electronics. CdS thin films were deposited by chemical bath deposition (70° C) on either 100 nm HfO2 or SiO2 as the gate dielectrics. Common gate transistors with channel lengths of 40-100 μm were fabricated with source and drain aluminum top contacts defined using a shadow mask process. No thermal annealing was performed throughout the device process. X-ray diffraction results clearly show the hexagonal crystalline phase of CdS. The electrical performance of HfO 2 /CdS -based thin film transistors shows a field effect mobility and threshold voltage of 25 cm2 V-1 s-1 and 2 V, respectively. Improvement in carrier mobility is associated with better nucleation and growth of CdS films deposited on HfO2. © 2010 The Electrochemical Society.en
dc.relation.urlhttp://esl.ecsdl.org/cgi/doi/10.1149/1.3456551en
dc.rightsArchived with thanks to Electrochemical and Solid-State Letters © 2010 ECS - The Electrochemical Societyen
dc.subjectcadmium compoundsen
dc.subjectcarrier mobilityen
dc.subjectelectrical conductivityen
dc.subjectflexible electronicsen
dc.subjectII-VI semiconductorsen
dc.subjectliquid phase depositionen
dc.subjectsemiconductor thin filmsen
dc.subjectsemiconductor-insulator boundariesen
dc.subjectthin film transistorsen
dc.subjectwide band gap semiconductorsen
dc.subjectX-ray diffractionen
dc.titleImpact of Gate Dielectric in Carrier Mobility in Low Temperature Chalcogenide Thin Film Transistors for Flexible Electronicsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalElectrochemical and Solid-State Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USAen
dc.contributor.institutionCentro de Investigación y Estudios Avanzados del IPN, Unidad Querétaro, Querétaro, Qro. 76001, Mexicoen
kaust.authorAlshareef, Husam N.en
kaust.authorCha, Dong Kyuen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.