Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization

Handle URI:
http://hdl.handle.net/10754/555785
Title:
Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization
Authors:
Gupta, Rahul P.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Gnade, B. E.
Abstract:
A detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.
KAUST Department:
Materials Science and Engineering Program
Citation:
Low Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization 2010, 157 (6):H666 Journal of The Electrochemical Society
Journal:
Journal of The Electrochemical Society
Issue Date:
27-Apr-2010
DOI:
10.1149/1.3385154
Type:
Article
ISSN:
00134651
Additional Links:
http://jes.ecsdl.org/cgi/doi/10.1149/1.3385154
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorGupta, Rahul P.en
dc.contributor.authorXiong, K.en
dc.contributor.authorWhite, J. B.en
dc.contributor.authorCho, Kyeongjaeen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorGnade, B. E.en
dc.date.accessioned2015-05-26T07:31:51Zen
dc.date.available2015-05-26T07:31:51Zen
dc.date.issued2010-04-27en
dc.identifier.citationLow Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallization 2010, 157 (6):H666 Journal of The Electrochemical Societyen
dc.identifier.issn00134651en
dc.identifier.doi10.1149/1.3385154en
dc.identifier.urihttp://hdl.handle.net/10754/555785en
dc.description.abstractA detailed study of the impact of surface preparation and postdeposition annealing on contact resistivity for sputtered Ni and Co contacts to thin-film Bi2 Te3 is presented. The specific contact resistivity is obtained using the transfer length method. It is observed that in situ sputter cleaning using Ar bombardment before metal deposition gives a surface free of oxides and other contaminants. This surface treatment reduces the contact resistivity by more than 10 times for both Ni and Co contacts. Postdeposition annealing at 100°C on samples that were sputter-cleaned further reduces the contact resistivity to < 10-7 cm2 for both Ni and Co contacts to Bi2 Te3. Co as a suitable contact metal to Bi2 Te3 is reported. Co provided similar contact resistance values as Ni, but had better adhesion and less diffusion into the thermoelectric material, making it a suitable candidate for contact metallization to Bi2 Te3 based devices. © 2010 The Electrochemical Society.en
dc.relation.urlhttp://jes.ecsdl.org/cgi/doi/10.1149/1.3385154en
dc.rightsArchived with thanks to Journal of The Electrochemical Society © 2010 ECS - The Electrochemical Societyen
dc.subjectadhesionen
dc.subjectannealingen
dc.subjectargonen
dc.subjectbismuth compoundsen
dc.subjectcobalten
dc.subjectdiffusionen
dc.subjectmetallisationen
dc.subjectnickelen
dc.subjectohmic contactsen
dc.subjectsemiconductor thin filmsen
dc.subjectsurface treatmenten
dc.subjectthermoelectricityen
dc.titleLow Resistance Ohmic Contacts to Bi[sub 2]Te[sub 3] Using Ni and Co Metallizationen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalJournal of The Electrochemical Societyen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USAen
dc.contributor.institutionMarlow Industries Incorporated, a subsidiary of II-VI Incorporated, Dallas, Texas 75238, USAen
kaust.authorAlshareef, Husam N.en
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