Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices

Handle URI:
http://hdl.handle.net/10754/555771
Title:
Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices
Authors:
Gupta, R. P.; Iyore, O. D.; Xiong, K.; White, J. B.; Cho, Kyeongjae; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Gnade, B. E.
Abstract:
Sputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.
KAUST Department:
Materials Science and Engineering Program
Citation:
Interface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices 2009, 12 (10):H395 Electrochemical and Solid-State Letters
Journal:
Electrochemical and Solid-State Letters
Issue Date:
13-Aug-2009
DOI:
10.1149/1.3196237
Type:
Article
ISSN:
10990062
Additional Links:
http://esl.ecsdl.org/cgi/doi/10.1149/1.3196237
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorGupta, R. P.en
dc.contributor.authorIyore, O. D.en
dc.contributor.authorXiong, K.en
dc.contributor.authorWhite, J. B.en
dc.contributor.authorCho, Kyeongjaeen
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorGnade, B. E.en
dc.date.accessioned2015-05-26T07:30:57Zen
dc.date.available2015-05-26T07:30:57Zen
dc.date.issued2009-08-13en
dc.identifier.citationInterface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devices 2009, 12 (10):H395 Electrochemical and Solid-State Lettersen
dc.identifier.issn10990062en
dc.identifier.doi10.1149/1.3196237en
dc.identifier.urihttp://hdl.handle.net/10754/555771en
dc.description.abstractSputtered Co is investigated as a suitable contact metal for bulk Bi2 (Te,Se) 3, and the results are compared to sputtered Ni. The coefficient of thermal expansion of Co matches that of bulk Bi 2 (Te,Se) 3 used in our study, and the compatible interface favors the selection of Co as a contact metal. Significant Ni diffusion into Bi2 (Te,Se) 3 was observed. In contrast, Co on Bi2 (Te,Se) 3 shows significantly less diffusion, even at anneal temperatures as high as 200°C. CoTe2 is the preferred phase that is formed. First principles calculations for Bi2 Te 3 support the experimental observation. © 2009 The Electrochemical Society.en
dc.relation.urlhttp://esl.ecsdl.org/cgi/doi/10.1149/1.3196237en
dc.rightsArchived with thanks to Electrochemical and Solid-State Letters © 2009 ECS - The Electrochemical Societyen
dc.subjectannealingen
dc.subjectbismuth compoundsen
dc.subjectcobalten
dc.subjectdensity functional theoryen
dc.subjectdiffusionen
dc.subjectnickelen
dc.subjectsemiconductor materialsen
dc.subjectsemiconductor-metal boundariesen
dc.subjectsputteringen
dc.subjectthermal expansionen
dc.subjectthermoelectric devicesen
dc.titleInterface Characterization of Cobalt Contacts on Bismuth Selenium Telluride for Thermoelectric Devicesen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalElectrochemical and Solid-State Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Material Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USAen
dc.contributor.institutionMarlow Industries Incorporated, a subsidiary of II-VI Incorporated, Dallas, Texas 75238, USAen
kaust.authorAlshareef, Husam N.en
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