High pressure annealing of Europium implanted GaN

Handle URI:
http://hdl.handle.net/10754/555703
Title:
High pressure annealing of Europium implanted GaN
Authors:
Lorenz, K.; Miranda, S. M. C.; Alves, E.; Roqan, Iman S. ( 0000-0001-7442-4330 ) ; O'Donnell, K. P.; Bokowski, M.
Abstract:
GaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Lorenz, K., S. M. C. Miranda, E. Alves, I. S. Roqan, K. P. O'Donnell, and M. Boćkowski. "High pressure annealing of Europium implanted GaN." In SPIE OPTO, pp. 82620C-82620C. International Society for Optics and Photonics, 2012.
Publisher:
Society of Photo-optical Instrumentation Engineers
Journal:
Proceedings of SPIE
Issue Date:
9-Feb-2012
DOI:
10.1117/12.906810
Type:
Article
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1385228
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLorenz, K.en
dc.contributor.authorMiranda, S. M. C.en
dc.contributor.authorAlves, E.en
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorO'Donnell, K. P.en
dc.contributor.authorBokowski, M.en
dc.date.accessioned2015-05-25T14:24:30Zen
dc.date.available2015-05-25T14:24:30Zen
dc.date.issued2012-02-09en
dc.identifier.citationLorenz, K., S. M. C. Miranda, E. Alves, I. S. Roqan, K. P. O'Donnell, and M. Boćkowski. "High pressure annealing of Europium implanted GaN." In SPIE OPTO, pp. 82620C-82620C. International Society for Optics and Photonics, 2012.en
dc.identifier.doi10.1117/12.906810en
dc.identifier.urihttp://hdl.handle.net/10754/555703en
dc.description.abstractGaN epilayers were implanted with Eu to fluences of 1×10^13 Eu/cm2 and 1×10^15 Eu/cm2. Post-implant thermal annealing was performed in ultra-high nitrogen pressures at temperatures up to 1450 ºC. For the lower fluence effective structural recovery of the crystal was observed for annealing at 1000 ºC while optical activation could be further improved at higher annealing temperatures. The higher fluence samples also reveal good optical activation; however, some residual implantation damage remains even for annealing at 1450 ºC which leads to a reduced incorporation of Eu on substitutional sites, a broadening of the Eu luminescence lines and to a strongly reduced fraction of optically active Eu ions. Possibilities for further optimization of implantation and annealing conditions are discussed.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.en
dc.publisherSociety of Photo-optical Instrumentation Engineersen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1385228en
dc.rightsArchived with thanks to Proceedings of SPIEen
dc.titleHigh pressure annealing of Europium implanted GaNen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalProceedings of SPIEen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstituto Tecnológico e Nuclear, EN10, 2686-953 Sacavém, Portugalen
dc.contributor.institutionCentro de Física Nuclear da Universidade de Lisboa, Av. Prof. Gama Pinto 2, 1649-003 Lisboa, Portugalen
dc.contributor.institutionSUPA Dept. of Physics, University of Strathclyde, Glasgow G4 0NG, Scotland UKen
dc.contributor.institutionInstitute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Polanden
kaust.authorRoqan, Iman S.en
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