Manipulating the voltage dependence of tunneling spin torques

Handle URI:
http://hdl.handle.net/10754/555689
Title:
Manipulating the voltage dependence of tunneling spin torques
Authors:
Manchon, Aurelien ( 0000-0002-4768-293X )
Abstract:
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Manchon, A. "Manipulating the voltage dependence of tunneling spin torques." In SPIE NanoScience+ Engineering, pp. 84610S-84610S. International Society for Optics and Photonics, 2012
Publisher:
Society of Photo-optical Instrumentation Engineers
Journal:
Proceedings of SPIE
Conference/Event name:
Spintronics V
Issue Date:
1-Oct-2012
DOI:
10.1117/12.929484
Type:
Conference Paper
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.929484; http://arxiv.org/abs/1207.5231
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorManchon, Aurelienen
dc.date.accessioned2015-05-25T14:44:20Zen
dc.date.available2015-05-25T14:44:20Zen
dc.date.issued2012-10-01en
dc.identifier.citationManchon, A. "Manipulating the voltage dependence of tunneling spin torques." In SPIE NanoScience+ Engineering, pp. 84610S-84610S. International Society for Optics and Photonics, 2012en
dc.identifier.doi10.1117/12.929484en
dc.identifier.urihttp://hdl.handle.net/10754/555689en
dc.description.abstractVoltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a direct impact on current-driven magnetization dynamics and on devices performances. After a brief overview of the progress made to date in the theoretical description of the spin torque in tunnel junctions, I present different ways to alter and control the bias dependence of both components of the spin torque. Engineering the junction (barrier and electrodes) structural asymmetries or controlling the spin accumulation profile in the free layer offer promising tools to design effcient spin devices.en
dc.publisherSociety of Photo-optical Instrumentation Engineersen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.929484en
dc.relation.urlhttp://arxiv.org/abs/1207.5231en
dc.rightsArchived with thanks to Proceedings of SPIEen
dc.titleManipulating the voltage dependence of tunneling spin torquesen
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalProceedings of SPIEen
dc.conference.date2012-08-12 to 2012-08-16en
dc.conference.nameSpintronics Ven
dc.conference.locationSan Diego, CA, USAen
dc.eprint.versionPublisher's Version/PDFen
dc.identifier.arxividarXiv:1207.5231en
kaust.authorManchon, Aurelienen
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