Unique lasing mechanism of localized dispersive nanostructures in InAs/InGaAlAs quantum dash broad interband laser

Handle URI:
http://hdl.handle.net/10754/555686
Title:
Unique lasing mechanism of localized dispersive nanostructures in InAs/InGaAlAs quantum dash broad interband laser
Authors:
Tan, C. L.; Djie, H. S.; Tan, C. K.; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
The authors report on the nanowires-like and nanodots-like lasing behaviors in addition to multiple-wavelength interband transitions from InAs/InAlGaAs quantum dash (Qdash) lasers in the range of ~1550 nm. The presence of lasing actions simultaneously from two different dash ensembles, after postgrowth intermixing for crystalline quality improvement, indicate the absence of optical phonon emission due to the small variation in quantized interband transition energies. This effect is reproducible and shows different lasing characteristics from its quantum dot and quantum wire laser counterparts. Furthermore, the small energy spacing of only 25 nm (at center lasing wavelength of ~1550 nm) and the subsequent quenching of higher energy transition states at higher bias level in Qdash lasers suggest the absence of excited-state transition in highly inhomogeneous self-assembled Qdash structures. However, the appearance of a second lasing line in a certain range of high injection level, which is due to the presence of different sizes of dash assembles, corresponds to the transition from smaller size of Qdash ensembles in different planar active medium. This unique transition mechanism will affect the carrier dynamics, relaxation process in particular and further indicates localized finite carrier lifetime in all sizes of Qdash ensembles. These phenomena will lead to important consequences for the ground-state lasing efficiency and frequency modulation response of Qdash devices. In addition, these imply that proper manipulation of the Qdash ensembles will potentially result in localized nanolasers from individual ensemble and thus contributing towards enormously large envelope lasing coverage from semiconductor devices.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Tan, C. L., H. S. Djie, C. K. Tan, and B. S. Ooi. "Unique lasing mechanism of localized dispersive nanostructures in InAs/InGaAlAs quantum dash broad interband laser." In OPTO, pp. 761602-761602. International Society for Optics and Photonics, 2010.
Publisher:
SPIE-Intl Soc Optical Eng
Journal:
Novel In-Plane Semiconductor Lasers IX
Conference/Event name:
Novel In-Plane Semiconductor Lasers IX
Issue Date:
11-Feb-2010
DOI:
10.1117/12.842278
Type:
Conference Paper
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1339618
Appears in Collections:
Conference Papers; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorTan, C. L.en
dc.contributor.authorDjie, H. S.en
dc.contributor.authorTan, C. K.en
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-05-25T14:37:03Zen
dc.date.available2015-05-25T14:37:03Zen
dc.date.issued2010-02-11en
dc.identifier.citationTan, C. L., H. S. Djie, C. K. Tan, and B. S. Ooi. "Unique lasing mechanism of localized dispersive nanostructures in InAs/InGaAlAs quantum dash broad interband laser." In OPTO, pp. 761602-761602. International Society for Optics and Photonics, 2010.en
dc.identifier.doi10.1117/12.842278en
dc.identifier.urihttp://hdl.handle.net/10754/555686en
dc.description.abstractThe authors report on the nanowires-like and nanodots-like lasing behaviors in addition to multiple-wavelength interband transitions from InAs/InAlGaAs quantum dash (Qdash) lasers in the range of ~1550 nm. The presence of lasing actions simultaneously from two different dash ensembles, after postgrowth intermixing for crystalline quality improvement, indicate the absence of optical phonon emission due to the small variation in quantized interband transition energies. This effect is reproducible and shows different lasing characteristics from its quantum dot and quantum wire laser counterparts. Furthermore, the small energy spacing of only 25 nm (at center lasing wavelength of ~1550 nm) and the subsequent quenching of higher energy transition states at higher bias level in Qdash lasers suggest the absence of excited-state transition in highly inhomogeneous self-assembled Qdash structures. However, the appearance of a second lasing line in a certain range of high injection level, which is due to the presence of different sizes of dash assembles, corresponds to the transition from smaller size of Qdash ensembles in different planar active medium. This unique transition mechanism will affect the carrier dynamics, relaxation process in particular and further indicates localized finite carrier lifetime in all sizes of Qdash ensembles. These phenomena will lead to important consequences for the ground-state lasing efficiency and frequency modulation response of Qdash devices. In addition, these imply that proper manipulation of the Qdash ensembles will potentially result in localized nanolasers from individual ensemble and thus contributing towards enormously large envelope lasing coverage from semiconductor devices.en
dc.publisherSPIE-Intl Soc Optical Engen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1339618en
dc.rightsArchived with thanks to Proceedings of SPIEen
dc.titleUnique lasing mechanism of localized dispersive nanostructures in InAs/InGaAlAs quantum dash broad interband laseren
dc.typeConference Paperen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNovel In-Plane Semiconductor Lasers IXen
dc.conference.date2010-01-25 to 2010-01-28en
dc.conference.nameNovel In-Plane Semiconductor Lasers IXen
dc.conference.locationSan Francisco, CA, USAen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Optical Technologies and Department of Electrical and Computer Engineering, Lehigh University, 7 Asa Drive, Bethlehem, PA, USA 18015en
dc.contributor.institutionJDS Uniphase Corporation, San Jose, CA, USA 95134en
dc.contributor.institutionDepartment of Electronic and Electrical Eng., University of Sheffield, Sheffield S13JD, UKen
kaust.authorOoi, Boon S.en
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