Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures

Handle URI:
http://hdl.handle.net/10754/555654
Title:
Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures
Authors:
Dong, Y.; Mooney, P. M.; Cai, F.; Anjum, Dalaver H.; Ur-Rehman, N.; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Xia, G. (Maggie)
Abstract:
Si-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Experiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures 2014, 3 (10):P302 ECS Journal of Solid State Science and Technology
Publisher:
The Electrochemical Society
Journal:
ECS Journal of Solid State Science and Technology
Issue Date:
26-Jul-2014
DOI:
10.1149/2.0041410jss
Type:
Article
ISSN:
2162-8769; 2162-8777
Additional Links:
http://jss.ecsdl.org/cgi/doi/10.1149/2.0041410jss
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Advanced Nanofabrication, Imaging and Characterization Core Lab; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorDong, Y.en
dc.contributor.authorMooney, P. M.en
dc.contributor.authorCai, F.en
dc.contributor.authorAnjum, Dalaver H.en
dc.contributor.authorUr-Rehman, N.en
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorXia, G. (Maggie)en
dc.date.accessioned2015-05-25T08:39:36Zen
dc.date.available2015-05-25T08:39:36Zen
dc.date.issued2014-07-26en
dc.identifier.citationExperiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructures 2014, 3 (10):P302 ECS Journal of Solid State Science and Technologyen
dc.identifier.issn2162-8769en
dc.identifier.issn2162-8777en
dc.identifier.doi10.1149/2.0041410jssen
dc.identifier.urihttp://hdl.handle.net/10754/555654en
dc.description.abstractSi-Ge interdiffusion and strain relaxation were studied in a metastable SiGe epitaxial structure. With Ge concentration profiling and ex-situ strain analysis, it was shown that during thermal anneals, both Si-Ge interdiffusion and strain relaxation occurred. Furthermore, the time evolutions of both strain relaxation and interdiffusion were characterized. It showed that during the ramp-up stage of thermal anneals at higher temperatures (800°C and 840°C), the degree of relaxation, R, reached a “plateau”, while interdiffusion was negligible. With the approximation that the R value is constant after the ramp-up stage, a quantitative interdiffusivity model was built to account for both the effect of strain relaxation and the impact of the relaxation induced dislocations, which gave good agreement with the experiment data.en
dc.publisherThe Electrochemical Societyen
dc.relation.urlhttp://jss.ecsdl.org/cgi/doi/10.1149/2.0041410jssen
dc.rightsArchived with thanks to ECS Journal of Solid State Science and Technology © 2014 The Electrochemical Societyen
dc.titleExperiments and Modeling of Si-Ge Interdiffusion with Partial Strain Relaxation in Epitaxial SiGe Heterostructuresen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalECS Journal of Solid State Science and Technologyen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials Engineering, University of British Columbia, Vancouver, BC V6T1Z4, Canadaen
dc.contributor.institutionPhysics Department, Simon Fraser University, Burnaby, BC V5A 1S6, Canadaen
kaust.authorAnjum, Dalaver H.en
kaust.authorZhang, Xixiangen
kaust.authorUr-Rehman, Naeemen
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