The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy

Handle URI:
http://hdl.handle.net/10754/555649
Title:
The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy
Authors:
Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Gasim, Anwar; Cha, Dong Kyu; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Yang, Yang; Jahangir, Shafat; Zhao, Chao ( 0000-0002-9582-1068 ) ; Bhattacharya, Pallab; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We report on the properties and growth kinetics of defect-free, photoluminescence (PL) efficient mushroom-like nanowires (MNWs) in the form of ~30nm thick hexagonal-shaped InGaN-nanodisk on GaN nanowires, coexisting with the conventional rod-like InGaN-on-GaN nanowires (RNWs) on (111)-silicon-substrate. When characterized using confocal microscopy (CFM) with 458nm laser excitation, while measuring spontaneous-emission at fixed detection wavelengths, the spatial intensity map evolved from having uniform pixelated emission, to having only an emission ring, and then a round emission spot. This corresponds to the PL emission with increasing indium composition; starting from emission mainly from the RNW, and then the 540 nm emission from one MNWs ensemble, followed by the 590 nm emission from a different MNW ensemble, respectively. These hexagonal-shaped InGaN-nano-disks ensembles were obtained during molecular-beam-epitaxy (MBE) growth. On the other hand, the regular rod-like InGaN-on-GaN nanowires (RNWs) were emitting at a shorter peak wavelength of 490 nm. While the formation of InGaN rod-like nanowire is well-understood, the formation of the hexagonal-shaped InGaN-nanodisk-on-GaN-nanowire requires further investigation. It was postulated to arise from the highly sensitive growth kinetics during plasma-assisted MBE of InGaN at low temperature, i.e. when the substrate temperature was reduced from 800 °C (GaN growth) to <600 °C (InGaN growth), during which sparsely populated metal-droplet formation prevails and further accumulated more indium adatoms due to a higher cohesive bond between metallic molecules. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
KAUST Department:
Photonics Laboratory; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Ng, Tien Khee, Anwar Gasim, Dongkyu Cha, Bilal Janjua, Yang Yang, Shafat Jahangir, Chao Zhao, Pallab Bhattacharya, and Boon Siew Ooi. "The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy." In SPIE OPTO, pp. 898613-898613. International Society for Optics and Photonics, 2014.
Publisher:
SPIE-Intl Soc Optical Eng
Journal:
Gallium Nitride Materials and Devices IX
Conference/Event name:
Gallium Nitride Materials and Devices IX
Issue Date:
8-Mar-2014
DOI:
10.1117/12.2039627
Type:
Conference Paper
Additional Links:
http://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2039627
Appears in Collections:
Conference Papers; Advanced Nanofabrication, Imaging and Characterization Core Lab; Advanced Nanofabrication, Imaging and Characterization Core Lab; Photonics Laboratory; Photonics Laboratory

Full metadata record

DC FieldValue Language
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorGasim, Anwaren
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorYang, Yangen
dc.contributor.authorJahangir, Shafaten
dc.contributor.authorZhao, Chaoen
dc.contributor.authorBhattacharya, Pallaben
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-05-25T08:28:20Zen
dc.date.available2015-05-25T08:28:20Zen
dc.date.issued2014-03-08en
dc.identifier.citationNg, Tien Khee, Anwar Gasim, Dongkyu Cha, Bilal Janjua, Yang Yang, Shafat Jahangir, Chao Zhao, Pallab Bhattacharya, and Boon Siew Ooi. "The formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxy." In SPIE OPTO, pp. 898613-898613. International Society for Optics and Photonics, 2014.en
dc.identifier.doi10.1117/12.2039627en
dc.identifier.urihttp://hdl.handle.net/10754/555649en
dc.description.abstractWe report on the properties and growth kinetics of defect-free, photoluminescence (PL) efficient mushroom-like nanowires (MNWs) in the form of ~30nm thick hexagonal-shaped InGaN-nanodisk on GaN nanowires, coexisting with the conventional rod-like InGaN-on-GaN nanowires (RNWs) on (111)-silicon-substrate. When characterized using confocal microscopy (CFM) with 458nm laser excitation, while measuring spontaneous-emission at fixed detection wavelengths, the spatial intensity map evolved from having uniform pixelated emission, to having only an emission ring, and then a round emission spot. This corresponds to the PL emission with increasing indium composition; starting from emission mainly from the RNW, and then the 540 nm emission from one MNWs ensemble, followed by the 590 nm emission from a different MNW ensemble, respectively. These hexagonal-shaped InGaN-nano-disks ensembles were obtained during molecular-beam-epitaxy (MBE) growth. On the other hand, the regular rod-like InGaN-on-GaN nanowires (RNWs) were emitting at a shorter peak wavelength of 490 nm. While the formation of InGaN rod-like nanowire is well-understood, the formation of the hexagonal-shaped InGaN-nanodisk-on-GaN-nanowire requires further investigation. It was postulated to arise from the highly sensitive growth kinetics during plasma-assisted MBE of InGaN at low temperature, i.e. when the substrate temperature was reduced from 800 °C (GaN growth) to <600 °C (InGaN growth), during which sparsely populated metal-droplet formation prevails and further accumulated more indium adatoms due to a higher cohesive bond between metallic molecules. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.en
dc.publisherSPIE-Intl Soc Optical Engen
dc.relation.urlhttp://proceedings.spiedigitallibrary.org/proceeding.aspx?doi=10.1117/12.2039627en
dc.rightsArchived with thanks to Proceedings of SPIEen
dc.titleThe formation of hexagonal-shaped InGaN-nanodisk on GaN-nanowire observed in plasma source molecular beam epitaxyen
dc.typeConference Paperen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalGallium Nitride Materials and Devices IXen
dc.conference.date2014-02-03 to 2014-02-06en
dc.conference.nameGallium Nitride Materials and Devices IXen
dc.conference.locationSan Francisco, CA, USAen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Electrical Engineering and Computer Science, University of Michigan, 1301, Beal Avenue, Ann Arbor, Michigan 48109-2122, USAen
kaust.authorNg, Tien Kheeen
kaust.authorGasim, Anwar A.en
kaust.authorCha, Dong Kyuen
kaust.authorYang, Yangen
kaust.authorZhao, Chaoen
kaust.authorOoi, Boon S.en
kaust.authorJanjua, Bilalen
kaust.authorJahangir, Shafaten
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