Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films

Handle URI:
http://hdl.handle.net/10754/554391
Title:
Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films
Authors:
Zhang, Yan; Mi, Wenbo; Wang, Xiaocha; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Anomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Scaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films 2015 Phys. Chem. Chem. Phys.
Publisher:
Royal Society of Chemistry (RSC)
Journal:
Phys. Chem. Chem. Phys.
Issue Date:
13-May-2015
DOI:
10.1039/C5CP01955A
Type:
Article
ISSN:
1463-9076; 1463-9084
Additional Links:
http://pubs.rsc.org/en/Content/ArticleLanding/2015/CP/C5CP01955A
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Yanen
dc.contributor.authorMi, Wenboen
dc.contributor.authorWang, Xiaochaen
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-05-21T07:13:36Zen
dc.date.available2015-05-21T07:13:36Zen
dc.date.issued2015-05-13en
dc.identifier.citationScaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Films 2015 Phys. Chem. Chem. Phys.en
dc.identifier.issn1463-9076en
dc.identifier.issn1463-9084en
dc.identifier.doi10.1039/C5CP01955Aen
dc.identifier.urihttp://hdl.handle.net/10754/554391en
dc.description.abstractAnomalous Hall effect (AHE) in the reactively sputtered epitaxial and polycrystalline γ′-Fe4N films is investigated systematically. The Hall resistivity is positive in the entire temperature range. The magnetization, carrier density and grain boundaries scattering have a major impact on the AHE scaling law. The scaling exponent γ in the conventional scaling of is larger than 2 in both the epitaxial and polycrystalline γ′-Fe4N films. Although γ>2 has been found in heterogeneous systems due to the effects of the surface and interface scattering on AHE, γ>2 is not expected in homogenous epitaxial systems. We demonstrated that γ>2 results from residual resistivity (ρxx0) in γ′-Fe4N films. Furthermore, the side-jump and intrinsic mechanisms are dominant in both epitaxial and polycrystalline samples according to the proper scaling relation.en
dc.publisherRoyal Society of Chemistry (RSC)en
dc.relation.urlhttp://pubs.rsc.org/en/Content/ArticleLanding/2015/CP/C5CP01955Aen
dc.rightsArchived with thanks to Phys. Chem. Chem. Phys.en
dc.titleScaling of Anomalous Hall Effects in Facing-Target Reactively Sputtered Fe4N Filmsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhys. Chem. Chem. Phys.en
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, Chinaen
dc.contributor.institutionTianjin Key Laboratory of Film Electronic & Communi cate Devices, School of Electronics Information Engineering, Tianjin Univer sity of Technology, Tianjin 300384, Chinaen
kaust.authorZhang, Xixiangen
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