Influence of the vacuum interface on the charge distribution in V 2 O 3 thin films

Handle URI:
http://hdl.handle.net/10754/554387
Title:
Influence of the vacuum interface on the charge distribution in V 2 O 3 thin films
Authors:
Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Frésard, R; Eyert, V
Abstract:
The electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that the effects of charge redistribution, induced by the vacuum interface, in such films are restricted to a very narrow surface layer of ≈15 Å thickness. As a consequence, charge redistribution can be ruled out as a source of the extraordinary thickness dependence of the metal–insulator transition observed in V2O3 thin films of ~100–1000 Å thickness.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Influence of the vacuum interface on the charge distribution in V 2 O 3 thin films 2009, 11 (9):093034 New Journal of Physics
Journal:
New Journal of Physics
Issue Date:
22-Sep-2009
DOI:
10.1088/1367-2630/11/9/093034
Type:
Article
ISSN:
1367-2630
Additional Links:
http://stacks.iop.org/1367-2630/11/i=9/a=093034?key=crossref.365b06e8bc2308309567c30596dcadc9; http://arxiv.org/abs/0909.1335
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorFrésard, Ren
dc.contributor.authorEyert, Ven
dc.date.accessioned2015-05-21T07:06:47Zen
dc.date.available2015-05-21T07:06:47Zen
dc.date.issued2009-09-22en
dc.identifier.citationInfluence of the vacuum interface on the charge distribution in V 2 O 3 thin films 2009, 11 (9):093034 New Journal of Physicsen
dc.identifier.issn1367-2630en
dc.identifier.doi10.1088/1367-2630/11/9/093034en
dc.identifier.urihttp://hdl.handle.net/10754/554387en
dc.description.abstractThe electronic structure of V2O3 thin films is studied by means of the augmented spherical wave method as based on density functional theory and the local density approximation. We establish that the effects of charge redistribution, induced by the vacuum interface, in such films are restricted to a very narrow surface layer of ≈15 Å thickness. As a consequence, charge redistribution can be ruled out as a source of the extraordinary thickness dependence of the metal–insulator transition observed in V2O3 thin films of ~100–1000 Å thickness.en
dc.relation.urlhttp://stacks.iop.org/1367-2630/11/i=9/a=093034?key=crossref.365b06e8bc2308309567c30596dcadc9en
dc.relation.urlhttp://arxiv.org/abs/0909.1335en
dc.rightsArchived with thanks to New Journal of Physics http://creativecommons.org/licenses/by/3.0/en
dc.titleInfluence of the vacuum interface on the charge distribution in V 2 O 3 thin filmsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalNew Journal of Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionLaboratoire CRISMAT, UMR CNRS-ENSICAEN(ISMRA) 6508, and IRMA, FR3095, Caen, Franceen
dc.contributor.institutionCenter for Electronic Correlations and Magnetism, Institute for Physics, University of Augsburg, 86135 Augsburg, Germanyen
dc.identifier.arxividarXiv:0909.1335en
kaust.authorSchwingenschlögl, Udoen
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