Scaling of the anomalous Hall current in Fe100−x(SiO2)x films

Handle URI:
http://hdl.handle.net/10754/553021
Title:
Scaling of the anomalous Hall current in Fe100−x(SiO2)x films
Authors:
Xu, W. J.; Zhang, Bei; Wang, Q. X.; Mi, W. B.; Wang, Z.; Li, W.; Yu, R. H.; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
To study the origin of the anomalous Hall effect, Fe100−x(SiO2)x granular films with a volume fraction of SiO2 (0 ⩽ x ⩽ 40.51) were fabricated using cosputtering. Hall and longitudinal resistivities were measured in the temperature range of 5–350 K with magnetic fields up to 5 T. As x increased from 0 to 40.51, the anomalous Hall resistivity and longitudinal resistivity increased by about four and three orders in magnitude, respectively. Analysis of the results revealed that the normalized anomalous Hall conductivity is a constant for all of the samples, which may suggest a scattering-independent anomalous Hall conductivity in Fe.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Scaling of the anomalous Hall current in Fe100−x(SiO2)x films, 2011, 83 (20) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
20-May-2011
DOI:
10.1103/PhysRevB.83.205311
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.83.205311
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorXu, W. J.en
dc.contributor.authorZhang, Beien
dc.contributor.authorWang, Q. X.en
dc.contributor.authorMi, W. B.en
dc.contributor.authorWang, Z.en
dc.contributor.authorLi, W.en
dc.contributor.authorYu, R. H.en
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-05-17T20:44:51Zen
dc.date.available2015-05-17T20:44:51Zen
dc.date.issued2011-05-20en
dc.identifier.citationScaling of the anomalous Hall current in Fe100−x(SiO2)x films, 2011, 83 (20) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.83.205311en
dc.identifier.urihttp://hdl.handle.net/10754/553021en
dc.description.abstractTo study the origin of the anomalous Hall effect, Fe100−x(SiO2)x granular films with a volume fraction of SiO2 (0 ⩽ x ⩽ 40.51) were fabricated using cosputtering. Hall and longitudinal resistivities were measured in the temperature range of 5–350 K with magnetic fields up to 5 T. As x increased from 0 to 40.51, the anomalous Hall resistivity and longitudinal resistivity increased by about four and three orders in magnitude, respectively. Analysis of the results revealed that the normalized anomalous Hall conductivity is a constant for all of the samples, which may suggest a scattering-independent anomalous Hall conductivity in Fe.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.83.205311en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleScaling of the anomalous Hall current in Fe100−x(SiO2)x filmsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitute of Nanoscience and Technology, The Hong Kong University of Science and Technology (HKUST), Clear Water Bay, Kowloon, Hong Kong, Chinaen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, Chinaen
dc.contributor.institutionSchool of Materials Science and Engineering, Beihang University, Beijing 100191, Chinaen
kaust.authorZhang, Beien
kaust.authorWang, Qingxiaoen
kaust.authorZhang, Xixiangen
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