Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions

Handle URI:
http://hdl.handle.net/10754/553020
Title:
Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions
Authors:
Manchon, Aurelien ( 0000-0002-4768-293X )
Abstract:
Spin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program
Citation:
Interfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions 2011, 83 (17) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
17-May-2011
DOI:
10.1103/PhysRevB.83.172403
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.83.172403
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorManchon, Aurelienen
dc.date.accessioned2015-05-17T20:44:23Zen
dc.date.available2015-05-17T20:44:23Zen
dc.date.issued2011-05-17en
dc.identifier.citationInterfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctions 2011, 83 (17) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.83.172403en
dc.identifier.urihttp://hdl.handle.net/10754/553020en
dc.description.abstractSpin transport in magnetic tunnel junctions comprising a single magnetic layer in the presence of interfacial spin-orbit interaction (SOI) is investigated theoretically. Due to the presence of interfacial SOI, a current-driven spin torque can be generated at the second order in SOI, even in the absence of an external spin polarizer. This torque possesses two components, one in plane and one perpendicular to the plane of rotation, that can induce either current-driven magnetization switching from an in-plane to out-of-plane configuration or magnetization precessions, similar to spin transfer torque in spin valves. Consequently, it appears that it is possible to control the magnetization steady state and dynamics by either varying the bias voltage or electrically modifying the SOI at the interface.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.83.172403en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleInterfacial spin-orbit splitting and current-driven spin torque in anisotropic tunnel junctionsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
kaust.authorManchon, Aurelienen
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