Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers

Handle URI:
http://hdl.handle.net/10754/552880
Title:
Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers
Authors:
Caraveo-Frescas, J. A.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Wang, H.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
It is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.
KAUST Department:
Materials Science and Engineering Program; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Anomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers 2012, 100 (10):102111 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
9-Mar-2012
DOI:
10.1063/1.3692580
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/100/10/10.1063/1.3692580
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorCaraveo-Frescas, J. A.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorWang, H.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-14T12:58:07Zen
dc.date.available2015-05-14T12:58:07Zen
dc.date.issued2012-03-09en
dc.identifier.citationAnomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layers 2012, 100 (10):102111 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3692580en
dc.identifier.urihttp://hdl.handle.net/10754/552880en
dc.description.abstractIt is shown that the well-known negative flatband voltage (VFB) shift, induced by rare-earth oxide capping in metal gate stacks, can be completely reversed in the absence of the silicon overlayer. Using TaN metal gates and Gd2O3-doped dielectric, we measure a ∼350 mV negative shift with the Si overlayer present and a ∼110 mV positive shift with the Si overlayer removed. This effect is correlated to a positive change in the average electrostatic potential at the TaN/dielectric interface which originates from an interfacial dipole. The dipole is created by the replacement of interfacial oxygen atoms in the HfO2 lattice with nitrogen atoms from TaN.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/100/10/10.1063/1.3692580en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleAnomalous positive flatband voltage shifts in metal gate stacks containing rare-earth oxide capping layersen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorHedhili, Mohamed N.en
kaust.authorWang, Haoen
kaust.authorSchwingenschlögl, Udoen
kaust.authorAlshareef, Husam N.en
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