Unconventional scaling of the anomalous Hall effect accompanying electron localization correction in the dirty regime

Handle URI:
http://hdl.handle.net/10754/552873
Title:
Unconventional scaling of the anomalous Hall effect accompanying electron localization correction in the dirty regime
Authors:
Lu, Y. M.; Cai, J. W.; Guo, Zaibing; Zhang, Xixiang ( 0000-0002-3478-6414 )
Abstract:
Scaling of the anomalous Hall conductivity to longitudinal conductivity σAH∝σ2xx has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films, while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturated when the thickness of the FePt film is reduced, and the corresponding Hall conductivity scaling exponent becomes 2, which is above the recent unified theory of 1.6 (σAH∝σ1.6xx). Our results strongly suggest that the correction of the electron localization modulates the scaling exponent of the anomalous Hall effect.
KAUST Department:
Core Labs
Citation:
Unconventional scaling of the anomalous Hall effect accompanying electron localization correction in the dirty regime 2013, 87 (9) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
5-Mar-2013
DOI:
10.1103/PhysRevB.87.094405
ARXIV:
arXiv:1210.3103
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.87.094405; http://arxiv.org/abs/1210.3103
Appears in Collections:
Articles

Full metadata record

DC FieldValue Language
dc.contributor.authorLu, Y. M.en
dc.contributor.authorCai, J. W.en
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorZhang, Xixiangen
dc.date.accessioned2015-05-14T12:52:31Zen
dc.date.available2015-05-14T12:52:31Zen
dc.date.issued2013-03-05en
dc.identifier.citationUnconventional scaling of the anomalous Hall effect accompanying electron localization correction in the dirty regime 2013, 87 (9) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.87.094405en
dc.identifier.urihttp://hdl.handle.net/10754/552873en
dc.description.abstractScaling of the anomalous Hall conductivity to longitudinal conductivity σAH∝σ2xx has been observed in the dirty regime of two-dimensional weak and strong localization regions in ultrathin, polycrystalline, chemically disordered, ferromagnetic FePt films. The relationship between electron transport and temperature reveals a quantitatively insignificant Coulomb interaction in these films, while the temperature dependent anomalous Hall conductivity experiences quantum correction from electron localization. At the onset of this correction, the low-temperature anomalous Hall resistivity begins to be saturated when the thickness of the FePt film is reduced, and the corresponding Hall conductivity scaling exponent becomes 2, which is above the recent unified theory of 1.6 (σAH∝σ1.6xx). Our results strongly suggest that the correction of the electron localization modulates the scaling exponent of the anomalous Hall effect.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.87.094405en
dc.relation.urlhttp://arxiv.org/abs/1210.3103en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleUnconventional scaling of the anomalous Hall effect accompanying electron localization correction in the dirty regimeen
dc.typeArticleen
dc.contributor.departmentCore Labsen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionBeijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of Chinaen
dc.identifier.arxividarXiv:1210.3103en
kaust.authorGuo, Zaibingen
kaust.authorZhang, Xixiangen
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