Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide

Handle URI:
http://hdl.handle.net/10754/552863
Title:
Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide
Authors:
Li, Yongfeng; Deng, Rui; Lin, Weinan; Tian, Yufeng; Peng, Haiyang; Yi, Jiabao; Yao, Bin; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
As a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Electrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide 2013, 87 (15) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
29-Apr-2013
DOI:
10.1103/PhysRevB.87.155151
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.87.155151
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLi, Yongfengen
dc.contributor.authorDeng, Ruien
dc.contributor.authorLin, Weinanen
dc.contributor.authorTian, Yufengen
dc.contributor.authorPeng, Haiyangen
dc.contributor.authorYi, Jiabaoen
dc.contributor.authorYao, Binen
dc.contributor.authorWu, Taoen
dc.date.accessioned2015-05-14T12:19:52Zen
dc.date.available2015-05-14T12:19:52Zen
dc.date.issued2013-04-29en
dc.identifier.citationElectrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxide 2013, 87 (15) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.87.155151en
dc.identifier.urihttp://hdl.handle.net/10754/552863en
dc.description.abstractAs a long-lived theme in solid-state physics, the Kondo effect reflects the many-body physics involving the short-range Coulomb interactions between itinerant electrons and localized spins in metallic materials. Here we show that the Kondo effect is present in ZnO, a prototypical wide-band-gap oxide, doped with a rare-earth element (Gd). The localized 4f electrons of Gd ions do not produce remanent magnetism, but interact strongly with the host electrons, giving rise to a saturating resistance upturn and negative magnetoresistance at low temperatures. Furthermore, the Kondo temperature and resistance can be electrostatically modulated using electric-double-layer gating with liquid ionic electrolyte. Our experiments provide the experimental evidence of tunable Kondo effect in ZnO, underscoring the magnetic interactions between localized and itinerant electrons and the emergent transport behaviors in such doped wide-band-gap oxides.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.87.155151en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleElectrostatic tuning of Kondo effect in a rare-earth-doped wide-band-gap oxideen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singaporeen
dc.contributor.institutionKey Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, People's Republic of Chinaen
dc.contributor.institutionSchool of Materials Science & Engineering, The University of New South Wales, Sydney NSW 2052, Australiaen
dc.contributor.institutionState Key Lab of Superhard Material, College of Physics, Jilin University, Changchun 130012, Chinaen
kaust.authorWu, Taoen
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