Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

Handle URI:
http://hdl.handle.net/10754/552855
Title:
Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films
Authors:
Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.
KAUST Department:
Materials Science and Engineering Program
Citation:
Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films 2012, 100 (25):253507 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
22-Jun-2012
DOI:
10.1063/1.4729787
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/100/25/10.1063/1.4729787
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorCaraveo-Frescas, J. A.en
dc.contributor.authorBhansali, Unnat. S.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-14T12:58:26Zen
dc.date.available2015-05-14T12:58:26Zen
dc.date.issued2012-06-22en
dc.identifier.citationHomo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films 2012, 100 (25):253507 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4729787en
dc.identifier.urihttp://hdl.handle.net/10754/552855en
dc.description.abstractHigh performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility of 8.7 cm2/Vs was obtained along with an Ion/Ioff ratio of 106. The ferroelectric thin filmtransistors showed a low sub-threshold swing value of 0.19 V/dec and a significantly reduced device operating voltage (±4 V) compared to the reported hetero-junction ferroelectrictransistors, which is very promising for low-power non-volatile memory applications.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/100/25/10.1063/1.4729787en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleHomo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin filmsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorNayak, Pradipta K.en
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorBhansali, Unnat Sampatrajen
kaust.authorAlshareef, Husam N.en
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