High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

Handle URI:
http://hdl.handle.net/10754/552853
Title:
High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment
Authors:
Nayak, Pradipta K.; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Cha, Dong Kyu; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.
KAUST Department:
Materials Science and Engineering Program; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment 2012, 100 (20):202106 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
16-May-2012
DOI:
10.1063/1.4718022
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/100/20/10.1063/1.4718022
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorNayak, Pradipta K.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-14T12:57:21Zen
dc.date.available2015-05-14T12:57:21Zen
dc.date.issued2012-05-16en
dc.identifier.citationHigh performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment 2012, 100 (20):202106 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4718022en
dc.identifier.urihttp://hdl.handle.net/10754/552853en
dc.description.abstractSolution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/100/20/10.1063/1.4718022en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleHigh performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatmenten
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorNayak, Pradipta K.en
kaust.authorHedhili, Mohamed N.en
kaust.authorCha, Dong Kyuen
kaust.authorAlshareef, Husam N.en
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