Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

Handle URI:
http://hdl.handle.net/10754/552852
Title:
Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers
Authors:
Caraveo-Frescas, J. A.; Wang, H.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.
KAUST Department:
Materials Science and Engineering Program
Citation:
Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers 2012, 101 (11):112902 Applied Physics Letters
Journal:
Applied Physics Letters
Issue Date:
10-Sep-2012
DOI:
10.1063/1.4747805
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/101/11/10.1063/1.4747805
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorCaraveo-Frescas, J. A.en
dc.contributor.authorWang, H.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-14T12:57:07Zen
dc.date.available2015-05-14T12:57:07Zen
dc.date.issued2012-09-10en
dc.identifier.citationExperimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers 2012, 101 (11):112902 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4747805en
dc.identifier.urihttp://hdl.handle.net/10754/552852en
dc.description.abstractThe impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.en
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/101/11/10.1063/1.4747805en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleExperimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layersen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorWang, Haoen
kaust.authorSchwingenschlögl, Udoen
kaust.authorAlshareef, Husam N.en
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