Spin diffusion in bulk GaN measured with MnAs spin injector

Handle URI:
http://hdl.handle.net/10754/552849
Title:
Spin diffusion in bulk GaN measured with MnAs spin injector
Authors:
Jahangir, Shafat; Dogan, Fatih; Kum, Hyun; Manchon, Aurelien ( 0000-0002-4768-293X ) ; Bhattacharya, Pallab
Abstract:
Spin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Spin diffusion in bulk GaN measured with MnAs spin injector 2012, 86 (3) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
16-Jul-2012
DOI:
10.1103/PhysRevB.86.035315
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.86.035315
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorJahangir, Shafaten
dc.contributor.authorDogan, Fatihen
dc.contributor.authorKum, Hyunen
dc.contributor.authorManchon, Aurelienen
dc.contributor.authorBhattacharya, Pallaben
dc.date.accessioned2015-05-14T12:48:55Zen
dc.date.available2015-05-14T12:48:55Zen
dc.date.issued2012-07-16en
dc.identifier.citationSpin diffusion in bulk GaN measured with MnAs spin injector 2012, 86 (3) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.86.035315en
dc.identifier.urihttp://hdl.handle.net/10754/552849en
dc.description.abstractSpin injection and precession in bulk wurtzite n-GaN with different doping densities are demonstrated with a ferromagnetic MnAs contact using the three-terminal Hanle measurement technique. Theoretical analysis using minimum fitting parameters indicates that the spin accumulation is primarily in the n-GaN channel rather than at the ferromagnet (FM)/semiconductor (SC) interface states. Spin relaxation in GaN is interpreted in terms of the D’yakonov-Perel mechanism, yielding a maximum spin lifetime of 44 ps and a spin diffusion length of 175 nm at room temperature. Our results indicate that epitaxial ferromagnetic MnAs is a suitable high-temperature spin injector for GaN.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.86.035315en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleSpin diffusion in bulk GaN measured with MnAs spin injectoren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionCenter for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122, USAen
kaust.authorDogan, Fatihen
kaust.authorManchon, Aurelienen
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