Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor

Handle URI:
http://hdl.handle.net/10754/552843
Title:
Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor
Authors:
Sun, Jian; Kosel, Jürgen ( 0000-0002-8998-8275 )
Abstract:
An extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Hall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor 2012, 100 (23):232407 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
6-Jun-2012
DOI:
10.1063/1.4726431
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/100/23/10.1063/1.4726431
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorSun, Jianen
dc.contributor.authorKosel, Jürgenen
dc.date.accessioned2015-05-14T12:05:14Zen
dc.date.available2015-05-14T12:05:14Zen
dc.date.issued2012-06-06en
dc.identifier.citationHall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensor 2012, 100 (23):232407 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.4726431en
dc.identifier.urihttp://hdl.handle.net/10754/552843en
dc.description.abstractAn extraordinary magnetoresistance (EMR) device with a 3-contact geometry has been fabricated and characterized. A large enhancement of the output sensitivity at low magnetic fields compared to the conventional EMR device has been found, which can be attributed to an additional influence coming from the Hall effect. Output sensitivities of 0.19 mV/T at zero-field and 0.2 mV/T at 0.01 T have been measured in the device, which is equivalent to the ones of the conventional EMR sensors with a bias of ∼0.04 T. The exceptional performance of EMR sensors in the high field region is maintained in the 3-contact device.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/100/23/10.1063/1.4726431en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleHall effect enhanced low-field sensitivity in a three-contact extraordinary magnetoresistance sensoren
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorSun, Jianen
kaust.authorKosel, Jürgenen
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