Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics

Handle URI:
http://hdl.handle.net/10754/552834
Title:
Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics
Authors:
Ozdogan, K.; Upadhyay Kahaly, M.; Sarath Kumar, S. R.; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We study epitaxial SrTiO3 interfaced with Nb-doped SrTi1-x Nb x O3 (x = 0, 0.125, 0.25, 0.375, and 0.5) by full-potential density functional theory. From the electronic band structures obtained by our ab-initio calculations we determine the dependence of the induced metallicity on the Nb concentration. We obtain a monotonous increase of the carrier density with the Nb concentration. The results are confirmed by experiments for SrTi0.88Nb0.12O3 and SrTi0.8Nb0.2O3, demonstrating the predictive power and limitations of our theoretical approach. We also show that the Seebeck coefficient decreases monotonously with increasing temperature.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Enhanced carrier density in Nb-doped SrTiO3 thermoelectrics 2012, 111 (5):054313 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
8-Mar-2012
DOI:
10.1063/1.3692057
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/111/5/10.1063/1.3692057
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorOzdogan, K.en
dc.contributor.authorUpadhyay Kahaly, M.en
dc.contributor.authorSarath Kumar, S. R.en
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-05-14T08:46:45Zen
dc.date.available2015-05-14T08:46:45Zen
dc.date.issued2012-03-08en
dc.identifier.citationEnhanced carrier density in Nb-doped SrTiO3 thermoelectrics 2012, 111 (5):054313 Journal of Applied Physicsen
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.3692057en
dc.identifier.urihttp://hdl.handle.net/10754/552834en
dc.description.abstractWe study epitaxial SrTiO3 interfaced with Nb-doped SrTi1-x Nb x O3 (x = 0, 0.125, 0.25, 0.375, and 0.5) by full-potential density functional theory. From the electronic band structures obtained by our ab-initio calculations we determine the dependence of the induced metallicity on the Nb concentration. We obtain a monotonous increase of the carrier density with the Nb concentration. The results are confirmed by experiments for SrTi0.88Nb0.12O3 and SrTi0.8Nb0.2O3, demonstrating the predictive power and limitations of our theoretical approach. We also show that the Seebeck coefficient decreases monotonously with increasing temperature.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/111/5/10.1063/1.3692057en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleEnhanced carrier density in Nb-doped SrTiO3 thermoelectricsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, Yildiz Technical University, 34210 Istanbul, Turkeyen
kaust.authorOzdogan, Kemalen
kaust.authorKahaly, M. Upadhyayen
kaust.authorSarath Kumar, S. R.en
kaust.authorAlshareef, Husam N.en
kaust.authorSchwingenschlögl, Udoen
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