Electric field tuning of phase separation in manganite thin films

Handle URI:
http://hdl.handle.net/10754/552832
Title:
Electric field tuning of phase separation in manganite thin films
Authors:
Lourembam, James; Wu, Jianchun; Ding, Junfeng; Lin, Weinan; Wu, Tao ( 0000-0003-0845-4827 )
Abstract:
In this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.
KAUST Department:
Materials Science and Engineering Program
Citation:
Electric field tuning of phase separation in manganite thin films 2014, 89 (1) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
29-Jan-2014
DOI:
10.1103/PhysRevB.89.014425
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.89.014425
Appears in Collections:
Articles; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorLourembam, Jamesen
dc.contributor.authorWu, Jianchunen
dc.contributor.authorDing, Junfengen
dc.contributor.authorLin, Weinanen
dc.contributor.authorWu, Taoen
dc.date.accessioned2015-05-14T08:45:46Zen
dc.date.available2015-05-14T08:45:46Zen
dc.date.issued2014-01-29en
dc.identifier.citationElectric field tuning of phase separation in manganite thin films 2014, 89 (1) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.89.014425en
dc.identifier.urihttp://hdl.handle.net/10754/552832en
dc.description.abstractIn this paper, we investigate the electric field effect on epitaxial Pr0.65(Ca0.75Sr0.25)0.35MnO3 thin films in electric double-layer transistors. Different from the conventional transistors with semiconducting channels, the sub(micrometer)-scale phase separation in the manganite channels is expected to result in inhomogeneous distribution of mobile carriers and local enhancement of electric field. The field effect is much larger in the low-temperature phase separation region compared to that in the high-temperature polaron transport region. Further enhancement of electroresistance is achieved by applying a magnetic field, and a 250% modulation of resistance is observed at 80 K, equivalent to an increase of the ferromagnetic metallic phase fraction by 0.51%, as estimated by the general effective medium model. Our results illustrate the complementary nature of electric and magnetic field effects in phase-separated manganites, providing insights on such novel electronic devices based on complex oxides.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.89.014425en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleElectric field tuning of phase separation in manganite thin filmsen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDivision of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singaporeen
dc.contributor.institutionKey Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064, Chinaen
kaust.authorDing, Junfengen
kaust.authorWu, Taoen
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