Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy

Handle URI:
http://hdl.handle.net/10754/552828
Title:
Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy
Authors:
Najar, Adel; Gerland, Michel; Jouiad, Mustapha
Abstract:
We report the fabrication of porous GaNnanostructures using UV-assisted electroless etching of bulk GaN layer grown on c-plane sapphire substrate in a solution consisting of HF:CH3OH:H2O2. The morphology of the porous GaNnanostructures was characterized for different etching intervals using high resolution scanning electron microscopy. The geometry and size of resultant pores do not appear to be affected by the etching time; however, the pore density was augmented for longer etching time. Micro-indentation tests were carried out to quantify the indentation modulus for different porous GaNnanostructures. Our results reveal a relationship between the elastic properties and the porosity kinetics, i.e., a decrease of the elastic modulus was observed with increasing porosity. The photoluminescence(PL) and Raman measurements carried out at room temperature for the etched samples having a high degree of porosity revealed a strong enhancement in intensity. Also, the peak of the PL wavelength was shifted towards a lower energy. The high intensity of PL was correlated to an increase of scattered photons within the porous media and to the reduction of the dislocation density.
KAUST Department:
Advanced Membranes and Porous Materials Research Center
Citation:
Porosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy 2012, 111 (9):093513 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
4-May-2012
DOI:
10.1063/1.4710994
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/111/9/10.1063/1.4710994
Appears in Collections:
Articles; Advanced Membranes and Porous Materials Research Center

Full metadata record

DC FieldValue Language
dc.contributor.authorNajar, Adelen
dc.contributor.authorGerland, Michelen
dc.contributor.authorJouiad, Mustaphaen
dc.date.accessioned2015-05-14T08:41:58Zen
dc.date.available2015-05-14T08:41:58Zen
dc.date.issued2012-05-04en
dc.identifier.citationPorosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopy 2012, 111 (9):093513 Journal of Applied Physicsen
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4710994en
dc.identifier.urihttp://hdl.handle.net/10754/552828en
dc.description.abstractWe report the fabrication of porous GaNnanostructures using UV-assisted electroless etching of bulk GaN layer grown on c-plane sapphire substrate in a solution consisting of HF:CH3OH:H2O2. The morphology of the porous GaNnanostructures was characterized for different etching intervals using high resolution scanning electron microscopy. The geometry and size of resultant pores do not appear to be affected by the etching time; however, the pore density was augmented for longer etching time. Micro-indentation tests were carried out to quantify the indentation modulus for different porous GaNnanostructures. Our results reveal a relationship between the elastic properties and the porosity kinetics, i.e., a decrease of the elastic modulus was observed with increasing porosity. The photoluminescence(PL) and Raman measurements carried out at room temperature for the etched samples having a high degree of porosity revealed a strong enhancement in intensity. Also, the peak of the PL wavelength was shifted towards a lower energy. The high intensity of PL was correlated to an increase of scattered photons within the porous media and to the reduction of the dislocation density.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/111/9/10.1063/1.4710994en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titlePorosity-induced relaxation of strains in GaN layers studied by means of micro-indentation and optical spectroscopyen
dc.typeArticleen
dc.contributor.departmentAdvanced Membranes and Porous Materials Research Centeren
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitut PPrime, UPR 3346 CNRS, BP 40109, 86961 Futuroscope Chasseneuil, Franceen
kaust.authorNajar, Adelen
kaust.authorJouiad, Mustaphaen
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