Origin of the high p-doping in F intercalated graphene on SiC

Handle URI:
http://hdl.handle.net/10754/552825
Title:
Origin of the high p-doping in F intercalated graphene on SiC
Authors:
Cheng, Yingchun; Kaloni, T. P.; Huang, G. S.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Origin of the high p-doping in F intercalated graphene on SiC 2011, 99 (5):053117 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
4-Aug-2011
DOI:
10.1063/1.3623484
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/99/5/10.1063/1.3623484
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorKaloni, T. P.en
dc.contributor.authorHuang, G. S.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-05-14T08:39:15Zen
dc.date.available2015-05-14T08:39:15Zen
dc.date.issued2011-08-04en
dc.identifier.citationOrigin of the high p-doping in F intercalated graphene on SiC 2011, 99 (5):053117 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3623484en
dc.identifier.urihttp://hdl.handle.net/10754/552825en
dc.description.abstractThe atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/99/5/10.1063/1.3623484en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleOrigin of the high p-doping in F intercalated graphene on SiCen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Materials Science, Fudan University, 220 Handan Road, Shanghai 200433, People’s Republic of Chinaen
kaust.authorCheng, Yingchunen
kaust.authorKaloni, Thaneshwor P.en
kaust.authorSchwingenschlögl, Udoen
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