Chemical insight into origin of forming-free resistive random-access memory devices

Handle URI:
http://hdl.handle.net/10754/552822
Title:
Chemical insight into origin of forming-free resistive random-access memory devices
Authors:
Wu, X.; Fang, Z.; Li, K.; Bosman, M.; Raghavan, N.; Li, X.; Yu, H. Y.; Singh, N.; Lo, G. Q.; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Pey, K. L.
Abstract:
We demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Chemical insight into origin of forming-free resistive random-access memory devices 2011, 99 (13):133504 Applied Physics Letters
Journal:
Applied Physics Letters
Issue Date:
29-Sep-2011
DOI:
10.1063/1.3645623
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/99/13/10.1063/1.3645623
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorWu, X.en
dc.contributor.authorFang, Z.en
dc.contributor.authorLi, K.en
dc.contributor.authorBosman, M.en
dc.contributor.authorRaghavan, N.en
dc.contributor.authorLi, X.en
dc.contributor.authorYu, H. Y.en
dc.contributor.authorSingh, N.en
dc.contributor.authorLo, G. Q.en
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorPey, K. L.en
dc.date.accessioned2015-05-14T08:36:46Zen
dc.date.available2015-05-14T08:36:46Zen
dc.date.issued2011-09-29en
dc.identifier.citationChemical insight into origin of forming-free resistive random-access memory devices 2011, 99 (13):133504 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3645623en
dc.identifier.urihttp://hdl.handle.net/10754/552822en
dc.description.abstractWe demonstrate the realization of a forming-step free resistive random access memory (RRAM) device using a HfOx/TiOx/HfOx/TiOxmultilayer structure, as a replacement for the conventional HfOx-based single layer structure. High-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS)analysis has been carried out to identify the distribution and the role played by Ti in the RRAM stack. Our results show that Ti out-diffusion into the HfOx layer is the chemical cause of forming-free behavior. Moreover, the capability of Ti to change its ionic state in HfOx eases the reduction-oxidation (redox) reaction, thus lead to the RRAM devices performance improvements.en
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/99/13/10.1063/1.3645623en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleChemical insight into origin of forming-free resistive random-access memory devicesen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), Singapore 117602, Singaporeen
dc.contributor.institutionSingapore University of Technology and Design, Singapore 138682, Singaporeen
dc.contributor.institutionInstitute of Microelectronics, A*STAR (Agency for Science, Technology and Research), Singapore 117685, Singaporeen
dc.contributor.institutionDivision of Microelectronics, School of Electrical & Electronic Engineering, Nanyang Technological University, Singapore 639798, Singaporeen
kaust.authorLi, Kunen
kaust.authorZhang, Xixiangen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.