Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs

Handle URI:
http://hdl.handle.net/10754/552801
Title:
Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs
Authors:
Mishra, Pawan ( 0000-0001-9764-6016 ) ; Janjua, Bilal ( 0000-0001-9974-9879 ) ; Ng, Tien Khee ( 0000-0002-1480-6975 ) ; Shen, Chao; Salhi, Abdelmajid; Alyamani, Ahmed; El-Desouki, Munir; Ooi, Boon S. ( 0000-0001-9606-5578 )
Abstract:
We investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.
KAUST Department:
Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division
Citation:
Achieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs 2015:1 IEEE Photonics Journal
Publisher:
Institute of Electrical and Electronics Engineers (IEEE)
Journal:
IEEE Photonics Journal
Issue Date:
6-May-2015
DOI:
10.1109/JPHOT.2015.2430017
Type:
Article
ISSN:
1943-0655
Additional Links:
http://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7102690
Appears in Collections:
Articles; Photonics Laboratory; Computer, Electrical and Mathematical Sciences and Engineering (CEMSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorMishra, Pawanen
dc.contributor.authorJanjua, Bilalen
dc.contributor.authorNg, Tien Kheeen
dc.contributor.authorShen, Chaoen
dc.contributor.authorSalhi, Abdelmajiden
dc.contributor.authorAlyamani, Ahmeden
dc.contributor.authorEl-Desouki, Muniren
dc.contributor.authorOoi, Boon S.en
dc.date.accessioned2015-05-14T07:14:19Zen
dc.date.available2015-05-14T07:14:19Zen
dc.date.issued2015-05-06en
dc.identifier.citationAchieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDs 2015:1 IEEE Photonics Journalen
dc.identifier.issn1943-0655en
dc.identifier.doi10.1109/JPHOT.2015.2430017en
dc.identifier.urihttp://hdl.handle.net/10754/552801en
dc.description.abstractWe investigated the design and growth of compositionally-graded InGaN multiple quantum wells (MQW) based light-emitting diode (LED) without an electron-blocking layer (EBL). Numerical investigation showed uniform carrier distribution in the active region, and higher radiative recombination rate for the optimized graded-MQW design, i.e. In0→xGa1→(1-x)N / InxGa(1-x)N / Inx→0Ga(1-x)→1N, as compared to the conventional stepped-MQW-LED. The composition-grading schemes, such as linear, parabolic, and Fermi-function profiles were numerically investigated for comparison. The stepped- and graded-MQW-LED were then grown using plasma assisted molecular beam epitaxy (PAMBE) through surface-stoichiometry optimization based on reflection high-energy electron-diffraction (RHEED) in-situ observations. Stepped- and graded-MQW-LED showed efficiency roll over at 160 A/cm2 and 275 A/cm2, respectively. The extended threshold current density roll-over (droop) in graded-MQW-LED is due to the improvement in carrier uniformity and radiative recombination rate, consistent with the numerical simulation.en
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.urlhttp://ieeexplore.ieee.org/lpdocs/epic03/wrapper.htm?arnumber=7102690en
dc.rightsArchived with thanks to IEEE Photonics Journalen
dc.subjectCompositional gradingen
dc.subjectLight emitting diodes (LEDs)en
dc.subjectpolarization fielden
dc.subjectsemiconductor quantum wellen
dc.subjectsolid state lightingen
dc.subjectwavefunction overlapen
dc.titleAchieving Uniform Carriers Distribution in MBE Grown Compositionally Graded InGaN Multiple-Quantum-Well LEDsen
dc.typeArticleen
dc.contributor.departmentPhotonics Laboratoryen
dc.contributor.departmentComputer, Electrical and Mathematical Sciences and Engineering (CEMSE) Divisionen
dc.identifier.journalIEEE Photonics Journalen
dc.eprint.versionPost-printen
dc.contributor.institutionNational Center for Nanotechnology, King Abdulaziz City for Science and Technology (KACST), Riyadh, 11442-6086, Kingdom of Saudi Arabia (KSA)en
kaust.authorNg, Tien Kheeen
kaust.authorShen, Chaoen
kaust.authorOoi, Boon S.en
kaust.authorMishra, Pawanen
kaust.authorJanjua, Bilalen
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