Valley polarization in magnetically doped single-layer transition-metal dichalcogenides

Handle URI:
http://hdl.handle.net/10754/552792
Title:
Valley polarization in magnetically doped single-layer transition-metal dichalcogenides
Authors:
Cheng, Yingchun; Zhang, Q. Y.; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
We demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Valley polarization in magnetically doped single-layer transition-metal dichalcogenides 2014, 89 (15) Physical Review B
Publisher:
American Physical Society (APS)
Journal:
Physical Review B
Issue Date:
28-Apr-2014
DOI:
10.1103/PhysRevB.89.155429
Type:
Article
ISSN:
1098-0121; 1550-235X
Additional Links:
http://link.aps.org/doi/10.1103/PhysRevB.89.155429
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorZhang, Q. Y.en
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-05-14T08:26:57Zen
dc.date.available2015-05-14T08:26:57Zen
dc.date.issued2014-04-28en
dc.identifier.citationValley polarization in magnetically doped single-layer transition-metal dichalcogenides 2014, 89 (15) Physical Review Ben
dc.identifier.issn1098-0121en
dc.identifier.issn1550-235Xen
dc.identifier.doi10.1103/PhysRevB.89.155429en
dc.identifier.urihttp://hdl.handle.net/10754/552792en
dc.description.abstractWe demonstrate that valley polarization can be induced and controlled in semiconducting single-layer transition-metal dichalcogenides by magnetic doping, which is important for spintronics, valleytronics, and photonics devices. As an example, we investigate Mn-doped MoS2 by first-principles calculations. We study how the valley polarization depends on the strength of the spin orbit coupling and the exchange interaction and discuss how it can be controlled by magnetic doping. Valley polarization by magnetic doping is also expected for other honeycomb materials with strong spin orbit coupling and the absence of inversion symmetry.en
dc.publisherAmerican Physical Society (APS)en
dc.relation.urlhttp://link.aps.org/doi/10.1103/PhysRevB.89.155429en
dc.rightsArchived with thanks to Physical Review Ben
dc.titleValley polarization in magnetically doped single-layer transition-metal dichalcogenidesen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalPhysical Review Ben
dc.eprint.versionPublisher's Version/PDFen
kaust.authorCheng, Yingchunen
kaust.authorZhang, Qingyunen
kaust.authorSchwingenschlögl, Udoen
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