Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory

Handle URI:
http://hdl.handle.net/10754/552786
Title:
Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory
Authors:
Wu, Xing; Li, Kun; Raghavan, Nagarajan; Bosman, Michel; Wang, Qing-Xiao; Cha, Dong Kyu; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Pey, Kin-Leong
Abstract:
Resistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Uncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory 2011, 99 (9):093502 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
29-Aug-2011
DOI:
10.1063/1.3624597
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/99/9/10.1063/1.3624597
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorWu, Xingen
dc.contributor.authorLi, Kunen
dc.contributor.authorRaghavan, Nagarajanen
dc.contributor.authorBosman, Michelen
dc.contributor.authorWang, Qing-Xiaoen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorPey, Kin-Leongen
dc.date.accessioned2015-05-14T07:17:48Zen
dc.date.available2015-05-14T07:17:48Zen
dc.date.issued2011-08-29en
dc.identifier.citationUncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memory 2011, 99 (9):093502 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3624597en
dc.identifier.urihttp://hdl.handle.net/10754/552786en
dc.description.abstractResistive switching in transition metal oxides could form the basis for next-generation non-volatile memory (NVM). It has been reported that the current in the high-conductivity state of several technologically relevant oxide materials flows through localized filaments, but these filaments have been characterized only individually, limiting our understanding of the possibility of multiple conductive filaments nucleation and rupture and the correlation kinetics of their evolution. In this study, direct visualization of uncorrelated multiple conductive filaments in ultra-thin HfO2-based high-κ dielectricresistive random access memory (RRAM) device has been achieved by high-resolution transmission electron microscopy (HRTEM), along with electron energy loss spectroscopy(EELS), for nanoscale chemical analysis. The locations of these multiple filaments are found to be spatially uncorrelated. The evolution of these microstructural changes and chemical properties of these filaments will provide a fundamental understanding of the switching mechanism for RRAM in thin oxide films and pave way for the investigation into improving the stability and scalability of switching memory devices.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/99/9/10.1063/1.3624597en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleUncorrelated multiple conductive filament nucleation and rupture in ultra-thin high-κ dielectric based resistive random access memoryen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDivision of Microelectronics, School of Electrical and Electronic Engineering, Nanyang Technological University, Nanyang Avenue, Singapore 639798, Singaporeen
dc.contributor.institutionInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602, Singaporeen
dc.contributor.institutionEngineering Product Development Pillar, Singapore University of Technology and Design, 20 Dover Drive, Singapore 138682, Singaporeen
kaust.authorLi, Kunen
kaust.authorWang, Qingxiaoen
kaust.authorCha, Dong Kyuen
kaust.authorZhang, Xixiangen
All Items in KAUST are protected by copyright, with all rights reserved, unless otherwise indicated.