Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

Handle URI:
http://hdl.handle.net/10754/552765
Title:
Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
Authors:
Lorenz, K.; Alves, E.; Roqan, Iman S. ( 0000-0001-7442-4330 ) ; O’Donnell, K. P.; Nishikawa, A.; Fujiwara, Y.; Boćkowski, M.
Abstract:
Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy 2010, 97 (11):111911 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
16-Sep-2010
DOI:
10.1063/1.3489103
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/97/11/10.1063/1.3489103
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorLorenz, K.en
dc.contributor.authorAlves, E.en
dc.contributor.authorRoqan, Iman S.en
dc.contributor.authorO’Donnell, K. P.en
dc.contributor.authorNishikawa, A.en
dc.contributor.authorFujiwara, Y.en
dc.contributor.authorBoćkowski, M.en
dc.date.accessioned2015-05-14T06:38:38Zen
dc.date.available2015-05-14T06:38:38Zen
dc.date.issued2010-09-16en
dc.identifier.citationLattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy 2010, 97 (11):111911 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3489103en
dc.identifier.urihttp://hdl.handle.net/10754/552765en
dc.description.abstractEu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/97/11/10.1063/1.3489103en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleLattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxyen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionInstitute of High Pressure Physics, Polish Academy of Sciences, 01-142 Warsaw, Polanden
dc.contributor.institutionDivision of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japanen
dc.contributor.institutionDepartment of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, Scotland, United Kingdomen
dc.contributor.institutionInstituto Tecnológico Nuclear, Estrada Nacional 10, 2686-953 Sacavém, Portugal and CFNUL, Av. Prof. Gama Pinto, 1649-003 Lisboa, Portugalen
kaust.authorRoqan, Iman S.en
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