Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films

Handle URI:
http://hdl.handle.net/10754/552764
Title:
Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films
Authors:
Kumar, S. R. Sarath; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Kasiviswanathan, S.
Abstract:
Correlation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Correlation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films 2010, 97 (11):111909 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
15-Sep-2010
DOI:
10.1063/1.3481800
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/97/11/10.1063/1.3481800
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorKumar, S. R. Sarathen
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorKasiviswanathan, S.en
dc.date.accessioned2015-05-14T06:37:11Zen
dc.date.available2015-05-14T06:37:11Zen
dc.date.issued2010-09-15en
dc.identifier.citationCorrelation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin films 2010, 97 (11):111909 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3481800en
dc.identifier.urihttp://hdl.handle.net/10754/552764en
dc.description.abstractCorrelation of charge state of Mn with the increase in resistivity with Mn concentration is demonstrated in Mn-doped indium tin oxide films. Bonding analysis shows that Mn 2p3/2 core level can be deconvoluted into three components corresponding to Mn2+ and Mn4+ with binding energies 640.8 eV and 642.7 eV, respectively, and a Mn2+ satellite at ∼5.4 eV away from the Mn2+ peak. The presence of the satellite peak unambiguously proves that Mn exists in the +2 charge state. The ratio of concentration of Mn2+ to Mn4+ of ∼4:1 suggests that charge compensation occurs in the n-type films causing the resistivity increase.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/97/11/10.1063/1.3481800en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleCorrelation of Mn charge state with the electrical resistivity of Mn doped indium tin oxide thin filmsen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionDepartment of Physics, Indian Institute of Technology Madras, Chennai 600036, Indiaen
kaust.authorSarath Kumar, S. R.en
kaust.authorHedhili, Mohamed N.en
kaust.authorAlshareef, Husam N.en
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