Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction

Handle URI:
http://hdl.handle.net/10754/552758
Title:
Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction
Authors:
Zhang, Yan; Mi, Wenbo; Wang, Xiaocha; Guo, Zaibing
Abstract:
Scaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm have been investigated. We have found that the scaling relationship between longitudinal (ρxx) and anomalous Hall (ρAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship View the MathML sourceσAH∝σxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.
KAUST Department:
Advanced Nanofabrication and Thin Film Core Lab
Citation:
Scaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction 2015 Solid State Communications
Journal:
Solid State Communications
Issue Date:
8-May-2015
DOI:
10.1016/j.ssc.2015.05.001
Type:
Article
ISSN:
00381098
Additional Links:
http://linkinghub.elsevier.com/retrieve/pii/S0038109815001623
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorZhang, Yanen
dc.contributor.authorMi, Wenboen
dc.contributor.authorWang, Xiaochaen
dc.contributor.authorGuo, Zaibingen
dc.date.accessioned2015-05-14T07:08:43Zen
dc.date.available2015-05-14T07:08:43Zen
dc.date.issued2015-05-08en
dc.identifier.citationScaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correction 2015 Solid State Communicationsen
dc.identifier.issn00381098en
dc.identifier.doi10.1016/j.ssc.2015.05.001en
dc.identifier.urihttp://hdl.handle.net/10754/552758en
dc.description.abstractScaling of anomalous Hall effect in amorphous CoFeB films with thickness ranging from 2 to 160 nm have been investigated. We have found that the scaling relationship between longitudinal (ρxx) and anomalous Hall (ρAH) resistivity is distinctly different in the Bloch and localization regions. For ultrathin CoFeB films, the sheet resistance (Rxx) and anomalous Hall conductance (GAH) received quantum correction from electron localization showing two different scaling relationships at different temperature regions. In contrast, the thicker films show a metallic conductance, which have only one scaling relationship in the entire temperature range. Furthermore, in the dirty regime of localization regions, an unconventional scaling relationship View the MathML sourceσAH∝σxxα with α=1.99 is found, rather than α=1.60 predicted by the unified theory.en
dc.relation.urlhttp://linkinghub.elsevier.com/retrieve/pii/S0038109815001623en
dc.rightsNOTICE: this is the author’s version of a work that was accepted for publication in Solid State Communications. Changes resulting from the publishing process, such as peer review, editing, corrections, structural formatting, and other quality control mechanisms may not be reflected in this document. Changes may have been made to this work since it was submitted for publication. A definitive version was subsequently published in Solid State Communications, 8 May 2015. DOI: 10.1016/j.ssc.2015.05.001en
dc.subjectCoFeBen
dc.subjectAnomalous Hall effecten
dc.subjectElectron localizationen
dc.subjectUltrathin filmsen
dc.titleScaling of anomalous hall effect in amorphous CoFeB Films with accompanying quantum correctionen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Laben
dc.identifier.journalSolid State Communicationsen
dc.eprint.versionPost-printen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Faculty of Science, Tianjin University, Tianjin 300072, Chinaen
dc.contributor.institutionTianjin Key Laboratory of Film Electronic & Communi cate Devices, School of Electronics Information Engineering, Tianjin Univer sity of Technology, Tianjinen
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