Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks

Handle URI:
http://hdl.handle.net/10754/552747
Title:
Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks
Authors:
Hinkle, C. L.; Galatage, R. V.; Chapman, R. A.; Vogel, E. M.; Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Freeman, C.; Wimmer, E.; Niimi, H.; Li-Fatou, A.; Shaw, J. B.; Chambers, J. J.
Abstract:
Effective work function (EWF) changes of TiN/HfO2annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O]=2.8×1021 cm−3 near the TiN/HfO2interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2interface cause the formation of dipoles that increase the EWF.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
Interfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks 2010, 96 (10):103502 Applied Physics Letters
Journal:
Applied Physics Letters
Issue Date:
9-Mar-2010
DOI:
10.1063/1.3353993
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/96/10/10.1063/1.3353993
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorHinkle, C. L.en
dc.contributor.authorGalatage, R. V.en
dc.contributor.authorChapman, R. A.en
dc.contributor.authorVogel, E. M.en
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorFreeman, C.en
dc.contributor.authorWimmer, E.en
dc.contributor.authorNiimi, H.en
dc.contributor.authorLi-Fatou, A.en
dc.contributor.authorShaw, J. B.en
dc.contributor.authorChambers, J. J.en
dc.date.accessioned2015-05-14T06:39:42Zen
dc.date.available2015-05-14T06:39:42Zen
dc.date.issued2010-03-09en
dc.identifier.citationInterfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacks 2010, 96 (10):103502 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3353993en
dc.identifier.urihttp://hdl.handle.net/10754/552747en
dc.description.abstractEffective work function (EWF) changes of TiN/HfO2annealed at low temperatures in different ambient environments are correlated with the atomic concentration of oxygen in the TiN near the metal/dielectric interface. EWF increases of 550 meV are achieved with anneals that incorporate oxygen throughout the TiN with [O]=2.8×1021 cm−3 near the TiN/HfO2interface. However, further increasing the oxygen concentration via more aggressive anneals results in a relative decrease of the EWF and increase in electrical thickness. First-principles calculations indicate the exchange of O and N atoms near the TiN/HfO2interface cause the formation of dipoles that increase the EWF.en
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/96/10/10.1063/1.3353993en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleInterfacial oxygen and nitrogen induced dipole formation and vacancy passivation for increased effective work functions in TiN/HfO[sub 2] gate stacksen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionAdvanced CMOS, Texas Instruments Incorporated, Dallas, Texas 75243, USAen
dc.contributor.institutionMaterials Design, Incorporated, Angel Fire, New Mexico 87710, USAen
dc.contributor.institutionDepartment of Electrical Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USAen
dc.contributor.institutionDepartment of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USAen
kaust.authorAlshareef, Husam N.en
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