Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics

Handle URI:
http://hdl.handle.net/10754/552742
Title:
Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics
Authors:
Alshareef, Husam N. ( 0000-0001-5029-2142 ) ; Caraveo-Frescas, J. A.; Cha, D. K.
Abstract:
Metal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program
Citation:
Nanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics 2010, 97 (20):202108 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
19-Nov-2010
DOI:
10.1063/1.3519363
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/97/20/10.1063/1.3519363
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorAlshareef, Husam N.en
dc.contributor.authorCaraveo-Frescas, J. A.en
dc.contributor.authorCha, D. K.en
dc.date.accessioned2015-05-14T06:33:20Zen
dc.date.available2015-05-14T06:33:20Zen
dc.date.issued2010-11-19en
dc.identifier.citationNanoscale gadolinium oxide capping layers on compositionally variant gate dielectrics 2010, 97 (20):202108 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3519363en
dc.identifier.urihttp://hdl.handle.net/10754/552742en
dc.description.abstractMetal gate work function enhancement using nanoscale (1.0 nm) Gd2O3 interfacial layers has been evaluated as a function of silicon oxide content in the HfxSiyOz gate dielectric and process thermal budget. It is found that the effective work function tuning by the Gd2O3 capping layer varied by nearly 400 mV as the composition of the underlying dielectric changed from 0% to 100% SiO2, and by nearly 300 mV as the maximum process temperature increased from ambient to 1000 °C. A qualitative model is proposed to explain these results, expanding the existing models for the lanthanide capping layer effect.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/97/20/10.1063/1.3519363en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleNanoscale gadolinium oxide capping layers on compositionally variant gate dielectricsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.contributor.departmentMaterials Science and Engineering Programen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorAlshareef, Husam N.en
kaust.authorCaraveo-Frescas, Jesus Alfonsoen
kaust.authorCha, Dong Kyuen
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