A route to strong p-doping of epitaxial graphene on SiC

Handle URI:
http://hdl.handle.net/10754/552741
Title:
A route to strong p-doping of epitaxial graphene on SiC
Authors:
Cheng, Yingchun; Schwingenschlögl, Udo ( 0000-0003-4179-7231 )
Abstract:
The effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.
KAUST Department:
Physical Sciences and Engineering (PSE) Division
Citation:
A route to strong p-doping of epitaxial graphene on SiC 2010, 97 (19):193304 Applied Physics Letters
Journal:
Applied Physics Letters
Issue Date:
9-Nov-2010
DOI:
10.1063/1.3515848
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/97/19/10.1063/1.3515848
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division

Full metadata record

DC FieldValue Language
dc.contributor.authorCheng, Yingchunen
dc.contributor.authorSchwingenschlögl, Udoen
dc.date.accessioned2015-05-14T06:30:11Zen
dc.date.available2015-05-14T06:30:11Zen
dc.date.issued2010-11-09en
dc.identifier.citationA route to strong p-doping of epitaxial graphene on SiC 2010, 97 (19):193304 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3515848en
dc.identifier.urihttp://hdl.handle.net/10754/552741en
dc.description.abstractThe effects of Au intercalation on the electronic properties of epitaxialgraphenegrown on SiC{0001} substrates are studied using first principles calculations. A graphenemonolayer on SiC{0001} restores the shape of the pristine graphene dispersion, where doping levels between strongly n-doped and weakly p-doped can be achieved by altering the Au coverage. We predict that Au intercalation between the two C layers of bilayer graphenegrown on SiC{0001} makes it possible to achieve a strongly p-doped graphene state, where the p-doping level can be controlled by means of the Au coverage.en
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/97/19/10.1063/1.3515848en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleA route to strong p-doping of epitaxial graphene on SiCen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorCheng, Yingchunen
kaust.authorSchwingenschlögl, Udoen
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