Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry

Handle URI:
http://hdl.handle.net/10754/552733
Title:
Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry
Authors:
Sarath Kumar, S. R.; Abutaha, Anas I. ( 0000-0002-8923-5417 ) ; Hedhili, Mohamed N. ( 0000-0002-3624-036X ) ; Alshareef, Husam N. ( 0000-0001-5029-2142 )
Abstract:
The influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.
KAUST Department:
Materials Science and Engineering Program; Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Modeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry 2012, 100 (5):052110 Applied Physics Letters
Publisher:
AIP Publishing
Journal:
Applied Physics Letters
Issue Date:
1-Feb-2012
DOI:
10.1063/1.3678186
Type:
Article
ISSN:
00036951
Additional Links:
http://scitation.aip.org/content/aip/journal/apl/100/5/10.1063/1.3678186
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab; Materials Science and Engineering Program

Full metadata record

DC FieldValue Language
dc.contributor.authorSarath Kumar, S. R.en
dc.contributor.authorAbutaha, Anas I.en
dc.contributor.authorHedhili, Mohamed N.en
dc.contributor.authorAlshareef, Husam N.en
dc.date.accessioned2015-05-14T06:15:06Zen
dc.date.available2015-05-14T06:15:06Zen
dc.date.issued2012-02-01en
dc.identifier.citationModeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometry 2012, 100 (5):052110 Applied Physics Lettersen
dc.identifier.issn00036951en
dc.identifier.doi10.1063/1.3678186en
dc.identifier.urihttp://hdl.handle.net/10754/552733en
dc.description.abstractThe influence of oxygen vacancies on the transport properties of epitaxial thermoelectric (Sr,La)TiO3 thin films is determined using electrical and spectroscopic ellipsometry (SE) measurements. Oxygen vacancy concentration was varied by ex-situ annealing in Ar and Ar/H2. All films exhibited degenerate semiconducting behavior, and electrical conductivity decreased (258–133 S cm−1) with increasing oxygen content. Similar decrease in the Seebeck coefficient is observed and attributed to a decrease in effective mass (7.8–3.2 me ), as determined by SE. Excellent agreement between transport properties deduced from SE and direct electrical measurements suggests that SE is an effective tool for studying oxide thin film thermoelectrics.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/apl/100/5/10.1063/1.3678186en
dc.rightsArchived with thanks to Applied Physics Lettersen
dc.titleModeling the transport properties of epitaxially grown thermoelectric oxide thin films using spectroscopic ellipsometryen
dc.typeArticleen
dc.contributor.departmentMaterials Science and Engineering Programen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalApplied Physics Lettersen
dc.eprint.versionPublisher's Version/PDFen
kaust.authorSarath Kumar, S. R.en
kaust.authorAbutaha, Anas I.en
kaust.authorHedhili, Mohamed N.en
kaust.authorAlshareef, Husam N.en
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