Intrinsic nanofilamentation in resistive switching

Handle URI:
http://hdl.handle.net/10754/552547
Title:
Intrinsic nanofilamentation in resistive switching
Authors:
Wu, Xing; Cha, Dong Kyu; Bosman, Michel ( 0000-0002-8717-7655 ) ; Raghavan, Nagarajan; Migas, Dmitri B.; Borisenko, Victor E.; Zhang, Xixiang ( 0000-0002-3478-6414 ) ; Li, Kun; Pey, Kin-Leong
Abstract:
Resistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.
KAUST Department:
Advanced Nanofabrication, Imaging and Characterization Core Lab
Citation:
Intrinsic nanofilamentation in resistive switching 2013, 113 (11):114503 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
15-Mar-2013
DOI:
10.1063/1.4794519
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/113/11/10.1063/1.4794519
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorWu, Xingen
dc.contributor.authorCha, Dong Kyuen
dc.contributor.authorBosman, Michelen
dc.contributor.authorRaghavan, Nagarajanen
dc.contributor.authorMigas, Dmitri B.en
dc.contributor.authorBorisenko, Victor E.en
dc.contributor.authorZhang, Xixiangen
dc.contributor.authorLi, Kunen
dc.contributor.authorPey, Kin-Leongen
dc.date.accessioned2015-05-10T14:28:07Zen
dc.date.available2015-05-10T14:28:07Zen
dc.date.issued2013-03-15en
dc.identifier.citationIntrinsic nanofilamentation in resistive switching 2013, 113 (11):114503 Journal of Applied Physicsen
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4794519en
dc.identifier.urihttp://hdl.handle.net/10754/552547en
dc.description.abstractResistive switching materials are promising candidates for nonvolatile data storage and reconfiguration of electronic applications. Intensive studies have been carried out on sandwiched metal-insulator-metal structures to achieve high density on-chip circuitry and non-volatile memory storage. Here, we provide insight into the mechanisms that govern highly reproducible controlled resistive switching via a nanofilament by using an asymmetric metal-insulator-semiconductor structure. In-situ transmission electron microscopy is used to study in real-time the physical structure and analyze the chemical composition of the nanofilament dynamically during resistive switching. Electrical stressing using an external voltage was applied by a tungsten tip to the nanosized devices having hafnium oxide (HfO2) as the insulator layer. The formation and rupture of the nanofilaments result in up to three orders of magnitude change in the current flowing through the dielectric during the switching event. Oxygen vacancies and metal atoms from the anode constitute the chemistry of the nanofilament.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/113/11/10.1063/1.4794519en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleIntrinsic nanofilamentation in resistive switchingen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication, Imaging and Characterization Core Laben
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionSingapore University of Technology and Design (SUTD), Singapore 138682en
dc.contributor.institutionSEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, Southeast University, Nanjing 210096, Chinaen
dc.contributor.institutionInstitute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research, 3 Research Link, Singapore 117602en
dc.contributor.institutionDivision of Microelectronics, School of Electrical and Electronics Engineering, Nanyang Technological University (NTU), Singapore 639798en
dc.contributor.institutionBelarusian State University of Informatics and Radioelectronics, P.Browka 6, Minsk 220013, Belarusen
kaust.authorCha, Dong Kyuen
kaust.authorZhang, Xixiangen
kaust.authorLi, Kunen
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