Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study

Handle URI:
http://hdl.handle.net/10754/552546
Title:
Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study
Authors:
Xiao, Zhen-Yu; Li, Yong-Feng; Yao, Bin; Deng, Rui; Ding, Zhan-Hui; Wu, Tao ( 0000-0003-0845-4827 ) ; Yang, Gang; Li, Chun-Ran; Dong, Zi-Yuan; Liu, Lei; Zhang, Li-Gong; Zhao, Hai-Feng
Abstract:
We report on bandgap engineering of an emerging photovoltaic material of Cu2CdxZn1-xSnS4 (CCZTS) alloy. CCZTS alloy thin films with different Cd contents and single kesterite phase were fabricated using the sol-gel method. The optical absorption measurements indicate that the bandgap of the kesterite CCZTS alloy can be continuously tuned in a range of 1.55-1.09 eV as Cd content varied from x = 0 to 1. Hall effect measurements suggest that the hole concentration of CCZTS films decreases with increasing Cd content. The CCZTS-based solar cell with x = 0.47 demonstrates a power conversion efficiency of 1.2%. Our first-principles calculations based on the hybrid functional method demonstrate that the bandgap of the kesterite CCZTS alloy decreases monotonically with increasing Cd content, supporting the experimental results. Furthermore, Cu2ZnSnS4/Cu 2CdSnS4 interface has a type-I band-alignment with a small valence-band offset, explaining the narrowing of the bandgap of CCZTS as the Cd content increases. Our results suggest that CCZTS alloy is a potentially suitable material to fabricate high-efficiency multi-junction tandem solar cells with different bandgap-tailored absorption layers. © 2013 AIP Publishing LLC.
KAUST Department:
Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center
Citation:
Bandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study 2013, 114 (18):183506 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
11-Nov-2013
DOI:
10.1063/1.4829457
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/114/18/10.1063/1.4829457
Appears in Collections:
Articles; Physical Sciences and Engineering (PSE) Division; Solar and Photovoltaic Engineering Research Center (SPERC)

Full metadata record

DC FieldValue Language
dc.contributor.authorXiao, Zhen-Yuen
dc.contributor.authorLi, Yong-Fengen
dc.contributor.authorYao, Binen
dc.contributor.authorDeng, Ruien
dc.contributor.authorDing, Zhan-Huien
dc.contributor.authorWu, Taoen
dc.contributor.authorYang, Gangen
dc.contributor.authorLi, Chun-Ranen
dc.contributor.authorDong, Zi-Yuanen
dc.contributor.authorLiu, Leien
dc.contributor.authorZhang, Li-Gongen
dc.contributor.authorZhao, Hai-Fengen
dc.date.accessioned2015-05-10T14:24:19Zen
dc.date.available2015-05-10T14:24:19Zen
dc.date.issued2013-11-11en
dc.identifier.citationBandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles study 2013, 114 (18):183506 Journal of Applied Physicsen
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4829457en
dc.identifier.urihttp://hdl.handle.net/10754/552546en
dc.description.abstractWe report on bandgap engineering of an emerging photovoltaic material of Cu2CdxZn1-xSnS4 (CCZTS) alloy. CCZTS alloy thin films with different Cd contents and single kesterite phase were fabricated using the sol-gel method. The optical absorption measurements indicate that the bandgap of the kesterite CCZTS alloy can be continuously tuned in a range of 1.55-1.09 eV as Cd content varied from x = 0 to 1. Hall effect measurements suggest that the hole concentration of CCZTS films decreases with increasing Cd content. The CCZTS-based solar cell with x = 0.47 demonstrates a power conversion efficiency of 1.2%. Our first-principles calculations based on the hybrid functional method demonstrate that the bandgap of the kesterite CCZTS alloy decreases monotonically with increasing Cd content, supporting the experimental results. Furthermore, Cu2ZnSnS4/Cu 2CdSnS4 interface has a type-I band-alignment with a small valence-band offset, explaining the narrowing of the bandgap of CCZTS as the Cd content increases. Our results suggest that CCZTS alloy is a potentially suitable material to fabricate high-efficiency multi-junction tandem solar cells with different bandgap-tailored absorption layers. © 2013 AIP Publishing LLC.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/114/18/10.1063/1.4829457en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleBandgap engineering of Cu2CdxZn1−xSnS4 alloy for photovoltaic applications: A complementary experimental and first-principles studyen
dc.typeArticleen
dc.contributor.departmentPhysical Sciences and Engineering (PSE) Divisionen
dc.contributor.departmentSolar and Photovoltaic Engineering Research Centeren
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionKey Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130012, Chinaen
dc.contributor.institutionState Key Laboratory of Superhard Material and College of Physics, Jilin University, Changchun 130012, Chinaen
dc.contributor.institutionSchool of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, Chinaen
dc.contributor.institutionState Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No.3888 Dongnanhu Road, Changchun 130033, Chinaen
kaust.authorWu, Taoen
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