A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films

Handle URI:
http://hdl.handle.net/10754/552543
Title:
A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films
Authors:
Duan, X. F.; Mi, Wenbo; Guo, Zaibing; Bai, Haili
Abstract:
Polycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.
KAUST Department:
Advanced Nanofabrication and Thin Film Core Lab
Citation:
A comparative study of transport properties in polycrystalline and epitaxial chromium nitride films 2013, 113 (2):023701 Journal of Applied Physics
Publisher:
AIP Publishing
Journal:
Journal of Applied Physics
Issue Date:
8-Jan-2013
DOI:
10.1063/1.4772682
Type:
Article
ISSN:
00218979
Additional Links:
http://scitation.aip.org/content/aip/journal/jap/113/2/10.1063/1.4772682
Appears in Collections:
Articles; Advanced Nanofabrication, Imaging and Characterization Core Lab

Full metadata record

DC FieldValue Language
dc.contributor.authorDuan, X. F.en
dc.contributor.authorMi, Wenboen
dc.contributor.authorGuo, Zaibingen
dc.contributor.authorBai, Hailien
dc.date.accessioned2015-05-10T14:18:17Zen
dc.date.available2015-05-10T14:18:17Zen
dc.date.issued2013-01-08en
dc.identifier.citationA comparative study of transport properties in polycrystalline and epitaxial chromium nitride films 2013, 113 (2):023701 Journal of Applied Physicsen
dc.identifier.issn00218979en
dc.identifier.doi10.1063/1.4772682en
dc.identifier.urihttp://hdl.handle.net/10754/552543en
dc.description.abstractPolycrystalline CrNx films on Si(100) and glass substrates and epitaxial CrNx films on MgO(100) substrates were fabricated by reactive sputtering with different nitrogen gas flow rates (fN2). With the increase of fN2, a lattice phase transformation from metallic Cr2N to semiconducting CrN appears in both polycrystalline and epitaxial CrNx films. At fN2= 100 sccm, the low-temperature conductance mechanism is dominated by both Mott and Efros-Shklovskii variable-range hopping in either polycrystalline or epitaxial CrN films. In all of the polycrystalline and epitaxial films, only the polycrystalline CrNx films fabricated at fN2 = 30 and 50 sccm exhibit a discontinuity in ρ(T) curves at 260-280 K, indicating that both the N-vacancy concentration and grain boundaries play important roles in the metal-insulator transition. © 2013 American Institute of Physics.en
dc.publisherAIP Publishingen
dc.relation.urlhttp://scitation.aip.org/content/aip/journal/jap/113/2/10.1063/1.4772682en
dc.rightsArchived with thanks to Journal of Applied Physicsen
dc.titleA comparative study of transport properties in polycrystalline and epitaxial chromium nitride filmsen
dc.typeArticleen
dc.contributor.departmentAdvanced Nanofabrication and Thin Film Core Laben
dc.identifier.journalJournal of Applied Physicsen
dc.eprint.versionPublisher's Version/PDFen
dc.contributor.institutionTianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University, Tianjin 300072, Chinaen
kaust.authorGuo, Zaibingen
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